DÜNNSCHICHT-VOLUMENWELLEN-RESONATOR (FBAR) MIT LUFTSPALT UND HERSTELLUNGSMETHODE DAFÜR

DÜNNSCHICHT-VOLUMENWELLEN-RESONATOR (FBAR) MIT LUFTSPALT UND HERSTELLUNGSMETHODE DAFÜR

A resistance layer (112) is formed on a semiconductor substrate (111). A membrane layer is formed on the resistance layer over a recess (112') to form an air gap. One electrode is formed on the upper portion of the membrane layer. A piezoelectric layer is formed on the upper portions of the mem...

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Hauptverfasser: JUN, CHAN-BONG, SEO, O-GWEON
Format: Patent
Sprache:ger
Schlagworte:
BASIC ELECTRONIC CIRCUITRY
ELECTRICITY
IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS
RESONATORS
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SEO, O-GWEON
description A resistance layer (112) is formed on a semiconductor substrate (111). A membrane layer is formed on the resistance layer over a recess (112') to form an air gap. One electrode is formed on the upper portion of the membrane layer. A piezoelectric layer is formed on the upper portions of the membrane layer and the electrode. Another electrode is formed on the upper portion of the piezoelectric layer. An independent claim is also included for a film bulk acoustic resonator manufacturing method.
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subjects BASIC ELECTRONIC CIRCUITRY
ELECTRICITY
IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS
RESONATORS
title DÜNNSCHICHT-VOLUMENWELLEN-RESONATOR (FBAR) MIT LUFTSPALT UND HERSTELLUNGSMETHODE DAFÜR
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