FERROMAGNETISCHES MATERIAL

A method is provided for producing a doped dilute ferromagnetic semiconductor material, by doping Zinc Oxide in bulk form with manganese to a maximum level of 5 atomic percent concentration. The material is preferably sintered at a maximum temperature of 650° C. The result of this process is a semic...

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Hauptverfasser:	JOHANSSON, BOERJE, SHARMA, PARMANAND, RAO, KUDUMBOOR VENKAT, AHUJA, RAJEEV
Format:	Patent
Sprache:	ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRICITY INDUCTANCES MAGNETS SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES TRANSFORMERS
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creator	JOHANSSON, BOERJE SHARMA, PARMANAND RAO, KUDUMBOOR VENKAT AHUJA, RAJEEV
description	A method is provided for producing a doped dilute ferromagnetic semiconductor material, by doping Zinc Oxide in bulk form with manganese to a maximum level of 5 atomic percent concentration. The material is preferably sintered at a maximum temperature of 650° C. The result of this process is a semiconductor material comprising Mn-doped ZnO with a Mn concentration not exceeding 5 atomic percent, wherein the Mn-doped ZnO is ferromagnetic within at least a part of the temperature range from about 218 Kelvin to about 425 Kelvin.
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The material is preferably sintered at a maximum temperature of 650° C. 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subjects	BASIC ELECTRIC ELEMENTS ELECTRICITY INDUCTANCES MAGNETS SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES TRANSFORMERS
title	FERROMAGNETISCHES MATERIAL
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