Configurable Logic Gates Using Polarity Controlled Silicon Nanowire Gate-All-Around FETs

This work demonstrates the first fabricated 4-transistor logic gates using polarity-configurable, gate-all- around silicon nanowire transistors. This technology enhances conventional CMOS functionality by adding the degree of free- dom of dynamic polarity control (n or p-type). In addition, devices...

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Hauptverfasser:	De Marchi, Michele, Zhang, Jian, Frache, Stefano, Sacchetto, Davide, Gaillardon, Pierre-Emmanuel, Leblebici, Yusuf, De Micheli, Giovanni
Format:	Web Resource
Sprache:	eng
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