Synaptic transistors with aluminum oxide dielectrics enabling full audio frequency range signal processing

The rapid evolution of the neuromorphic computing stimulates the search for novel brain-inspired electronic devices. Synaptic transistors are three-terminal devices that can mimic the chemical synapses while consuming low power, whereby an insulating dielectric layer physically separates output and...

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Hauptverfasser: Bolat, Sami, Torres Sevilla, Galo, Mancinelli, Alessio, Gilshtein, Evgeniia, Sastre, Jordi, Cabas Vidani, Antonio, Bachmann, Dominik, Shorubalko, Ivan, Briand, Danick, Tiwari, Ayodhya N, Romanyuk, Yaroslav E
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creator Bolat, Sami
Torres Sevilla, Galo
Mancinelli, Alessio
Gilshtein, Evgeniia
Sastre, Jordi
Cabas Vidani, Antonio
Bachmann, Dominik
Shorubalko, Ivan
Briand, Danick
Tiwari, Ayodhya N
Romanyuk, Yaroslav E
description The rapid evolution of the neuromorphic computing stimulates the search for novel brain-inspired electronic devices. Synaptic transistors are three-terminal devices that can mimic the chemical synapses while consuming low power, whereby an insulating dielectric layer physically separates output and input signals from each other. Appropriate choice of the dielectric is crucial in achieving a wide range of operation frequencies in these devices. Here we report synaptic transistors with printed aluminum oxide dielectrics, improving the operation frequency of solution-processed synaptic transistors by almost two orders of magnitude to 50 kHz. Fabricated devices, yielding synaptic response for all audio frequencies (20 Hz to 20 kHz), are employed in an acoustic response system to show the potential for future research in neuro-acoustic signal processing with printed oxide electronics.
doi_str_mv 10.1038/s41598-020-73705-w
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title Synaptic transistors with aluminum oxide dielectrics enabling full audio frequency range signal processing
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