Identifying substitutional oxygen as a prolific point defect in monolayer transition metal dichalcogenides

Chalcogen vacancies are generally considered to be the most common point defects in transition metal dichalcogenide (TMD) semiconductors because of their low formation energy in vacuum and their frequent observation in transmission electron microscopy studies. Consequently, unexpected optical, trans...

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Hauptverfasser:	Barja, Sara, Refaely-Abramson, Sivan, Schuler, Bruno, Qiu, Diana Y, Pulkin, Artem, Wickenburg, Sebastian, Ryu, Hyejin, Ugeda, Miguel M, Kastl, Christoph, Chen, Christopher, Hwang, Choongyu, Schwartzberg, Adam, Aloni, Shaul, Mo, Sung-Kwan, Ogletree, D. Frank, Crommie, Michael F, Yazyev, Oleg V, Louie, Steven G, Neaton, Jeffrey B, Weber-Bargioni, Alexander
Format:	Web Resource
Sprache:	eng
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