Probing/Manipulating the Interfacial Atomic Bonding between High k Dielectrics and InGaAs for Ultimate CMOS

The MOS technology using high-k dielectrics on high carrier mobility semiconductors of InGaAs leading to a faster speed at lower power is now at the International Technology Roadmap for Semiconductors (ITRS). Great efforts have been dedicated to understand the high k/InGaAs interface. This project i...

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Bibliographische Detailangaben
Hauptverfasser:	Hong, Minghwei, Kwo, J R
Format:	Report
Sprache:	eng
Schlagworte:	ATOMS BONDING CARRIER MOBILITY COMPLEMENTARY METAL OXIDE SEMICONDUCTORS DIELECTRIC FILMS DIELECTRICS FOREIGN REPORTS HAFNIUM HIGH RESOLUTION INDIUM GALLIUM ARSENIDES MAGNETOOPTICS NANOTECHNOLOGY PE61102F SEMICONDUCTORS Solid State Physics TAIWAN
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