Effects of Differing Carbon Nanotube Field-effect Transistor Architectures

Single-walled carbon nanotube field-effect transistors (SWCNTFETs) were fabricated with varying device architectures. Variations on the standard back-gated architecture included varying the gate oxide material and thickness, changing source and drain contact metallization, suspending the carbon nano...

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Bibliographische Detailangaben

Hauptverfasser:	Dorsey, Andrew M, Ervin, Matthew H
Format:	Report
Sprache:	eng
Schlagworte:	ALUMINUM OXIDES ARCHITECTURE CARBON NANOTUBES Electrical and Electronic Equipment FIELD EFFECT TRANSISTORS GATES(CIRCUITS) METALLIZING Refractory Fibers SWCNTFETS(SINGLE-WALLED CARBON NANOTUBE FIELD-EFFECT TRANSISTORS) THICKNESS
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