Observation and Study of Dislocation Etch Pits in Molecular Beam Epitaxy Grown Gallium Nitride With the Use of Phosphoric Acid and Molten Potassium Hydroxide

Defects continue to challenge the functionality and reliability gallium nitride (GaN)-based devices. GaN grown on sapphire by molecular beam epitaxy was investigated by wet etching in hot phosphoric acid (H3PO4) and molten potassium hydroxide (KOH). Hexagonally shaped etch pits were formed on the et...

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