Physics and Fabrication of Quasi-One-Dimensional Conductors

To facilitate research in Quantum Effect Electronics (QEE) it is necessary that a reliable fabrication technology be developed to maximize the likelihood that a particular device will exhibit observable quantum effects. By having a controlled process, it becomes possible to fabricate more demanding structures, and to experimentally explore new areas of device physics. In this thesis, the fabrication technology developed for the fabrication of quasi-one-dimensional (Q1D) conductors in the GaAs/MGaAs system using x-ray lithography will be described, including modeling tools that have been developed to better understand some critical process steps. In addition, results will be analyzed with respect to simple theories that have been proposed over the past several years to describe such devices. These Q1D conductors are harnessed in a new type of Q1D planar resonant tunneling transistor (Q1D-PRESTFET) with one-dimensional emitter and collector, that is predicted to exhibit very strong resonances in electron transport. Sponsored in part by the Joint Services Electronics Program and in part by the Air Force Office of Scientific Research.