Synthesis, Characterization and Immobilization of Nanocrystalline Binary and Ternary III-V (13-15) Compound Semiconductors
Two synthetic routes to nanocrystalline III-V (13-15) materials are discussed. The first employs dehalosilylation reactions between Group III trihalides and E(SiMe3)3 (E = P, As) in hydrocarbon solvents affording nanocrystalline III-V semiconductors or their precursors. The second involves reactions...
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| creator | Halaoui, Lara I Kher, Shreyas S Lube, Michael S Aubuchon, Steven R Hagan, Carolynne R |
| description | Two synthetic routes to nanocrystalline III-V (13-15) materials are discussed. The first employs dehalosilylation reactions between Group III trihalides and E(SiMe3)3 (E = P, As) in hydrocarbon solvents affording nanocrystalline III-V semiconductors or their precursors. The second involves reactions of MX3 (M = Ga, X = Cl, I; M = In, X = Cl, I) in glymes with in situ synthesized (Na/K)3E (E = P, As, Sb) in aromatic solvents, yielding nanocrystalline GaP, GaAs, GaSb, InP, InAs and InSb after refluxing reaction mixtures. Materials are characterized by TEM, XRD, Elemental Analysis, NMR, UV-vis, and STM. STM images of InAs give particle size distributions and confirm sample conductivity. Scanning tunneling spectroscopy shows a larger bandgap for nanocrystalline InAs than for InAs wafers, consistent With quantum confinement. jg p3 |
| format | Report |
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The first employs dehalosilylation reactions between Group III trihalides and E(SiMe3)3 (E = P, As) in hydrocarbon solvents affording nanocrystalline III-V semiconductors or their precursors. The second involves reactions of MX3 (M = Ga, X = Cl, I; M = In, X = Cl, I) in glymes with in situ synthesized (Na/K)3E (E = P, As, Sb) in aromatic solvents, yielding nanocrystalline GaP, GaAs, GaSb, InP, InAs and InSb after refluxing reaction mixtures. Materials are characterized by TEM, XRD, Elemental Analysis, NMR, UV-vis, and STM. STM images of InAs give particle size distributions and confirm sample conductivity. Scanning tunneling spectroscopy shows a larger bandgap for nanocrystalline InAs than for InAs wafers, consistent With quantum confinement. jg p3</description><language>eng</language><subject>AROMATIC COMPOUNDS ; ARSENIC ; Atomic and Molecular Physics and Spectroscopy ; BINARY COMPOUNDS ; CHLORIDES ; CONFINEMENT(GENERAL) ; Crystallography ; DEHALOSILYLATION REACTIONS ; DISTRIBUTION ; Electrical and Electronic Equipment ; GALLIUM ANTIMONIDES ; GALLIUM ARSENIDES ; GALLIUM PHOSPHIDES ; GROUP III COMPOUNDS ; GROUP IV COMPOUNDS ; GROUP V COMPOUNDS ; HALIDES ; HYDROCARBONS ; IMMOBILIZATION ; INDIUM ANTIMONIDES ; INDIUM PHOSPHIDES ; Inorganic Chemistry ; IODIDES ; MICROSCOPY ; MIXTURES ; NUCLEAR MAGNETIC RESONANCE ; ORGANIC SOLVENTS ; PARTICLE SIZE ; PHOSPHORUS ; Physical Chemistry ; QUANTUM THEORY ; RESPONSE ; RESTRAINT ; ROUTING ; SCANNING ; SEMICONDUCTORS ; SOLVENTS ; SPECTROSCOPY ; STM(SCANNING TUNNELING MICROSCOPY) ; SYNTHESIS ; TERNARY COMPOUNDS ; TUNNELING(ELECTRONICS) ; X RAY DIFFRACTION</subject><creationdate>1995</creationdate><rights>APPROVED FOR PUBLIC RELEASE</rights><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,780,885,27566,27567</link.rule.ids><linktorsrc>$$Uhttps://apps.dtic.mil/sti/citations/ADA302848$$EView_record_in_DTIC$$FView_record_in_$$GDTIC$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Halaoui, Lara I</creatorcontrib><creatorcontrib>Kher, Shreyas S</creatorcontrib><creatorcontrib>Lube, Michael S</creatorcontrib><creatorcontrib>Aubuchon, Steven R</creatorcontrib><creatorcontrib>Hagan, Carolynne R</creatorcontrib><creatorcontrib>DUKE UNIV DURHAM NC DEPT OF CHEMISTRY</creatorcontrib><title>Synthesis, Characterization and Immobilization of Nanocrystalline Binary and Ternary III-V (13-15) Compound Semiconductors</title><description>Two synthetic routes to nanocrystalline III-V (13-15) materials are discussed. The first employs dehalosilylation reactions between Group III trihalides and E(SiMe3)3 (E = P, As) in hydrocarbon solvents affording nanocrystalline III-V semiconductors or their precursors. The second involves reactions of MX3 (M = Ga, X = Cl, I; M = In, X = Cl, I) in glymes with in situ synthesized (Na/K)3E (E = P, As, Sb) in aromatic solvents, yielding nanocrystalline GaP, GaAs, GaSb, InP, InAs and InSb after refluxing reaction mixtures. Materials are characterized by TEM, XRD, Elemental Analysis, NMR, UV-vis, and STM. STM images of InAs give particle size distributions and confirm sample conductivity. 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Kher, Shreyas S ; Lube, Michael S ; Aubuchon, Steven R ; Hagan, Carolynne R</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-dtic_stinet_ADA3028483</frbrgroupid><rsrctype>reports</rsrctype><prefilter>reports</prefilter><language>eng</language><creationdate>1995</creationdate><topic>AROMATIC COMPOUNDS</topic><topic>ARSENIC</topic><topic>Atomic and Molecular Physics and Spectroscopy</topic><topic>BINARY COMPOUNDS</topic><topic>CHLORIDES</topic><topic>CONFINEMENT(GENERAL)</topic><topic>Crystallography</topic><topic>DEHALOSILYLATION REACTIONS</topic><topic>DISTRIBUTION</topic><topic>Electrical and Electronic Equipment</topic><topic>GALLIUM ANTIMONIDES</topic><topic>GALLIUM ARSENIDES</topic><topic>GALLIUM PHOSPHIDES</topic><topic>GROUP III COMPOUNDS</topic><topic>GROUP IV COMPOUNDS</topic><topic>GROUP V COMPOUNDS</topic><topic>HALIDES</topic><topic>HYDROCARBONS</topic><topic>IMMOBILIZATION</topic><topic>INDIUM ANTIMONIDES</topic><topic>INDIUM PHOSPHIDES</topic><topic>Inorganic Chemistry</topic><topic>IODIDES</topic><topic>MICROSCOPY</topic><topic>MIXTURES</topic><topic>NUCLEAR MAGNETIC RESONANCE</topic><topic>ORGANIC SOLVENTS</topic><topic>PARTICLE SIZE</topic><topic>PHOSPHORUS</topic><topic>Physical Chemistry</topic><topic>QUANTUM THEORY</topic><topic>RESPONSE</topic><topic>RESTRAINT</topic><topic>ROUTING</topic><topic>SCANNING</topic><topic>SEMICONDUCTORS</topic><topic>SOLVENTS</topic><topic>SPECTROSCOPY</topic><topic>STM(SCANNING TUNNELING MICROSCOPY)</topic><topic>SYNTHESIS</topic><topic>TERNARY COMPOUNDS</topic><topic>TUNNELING(ELECTRONICS)</topic><topic>X RAY DIFFRACTION</topic><toplevel>online_resources</toplevel><creatorcontrib>Halaoui, Lara I</creatorcontrib><creatorcontrib>Kher, Shreyas S</creatorcontrib><creatorcontrib>Lube, Michael S</creatorcontrib><creatorcontrib>Aubuchon, Steven R</creatorcontrib><creatorcontrib>Hagan, Carolynne R</creatorcontrib><creatorcontrib>DUKE UNIV DURHAM NC DEPT OF CHEMISTRY</creatorcontrib><collection>DTIC Technical Reports</collection><collection>DTIC STINET</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Halaoui, Lara I</au><au>Kher, Shreyas S</au><au>Lube, Michael S</au><au>Aubuchon, Steven R</au><au>Hagan, Carolynne R</au><aucorp>DUKE UNIV DURHAM NC DEPT OF CHEMISTRY</aucorp><format>book</format><genre>unknown</genre><ristype>RPRT</ristype><btitle>Synthesis, Characterization and Immobilization of Nanocrystalline Binary and Ternary III-V (13-15) Compound Semiconductors</btitle><date>1995-12-20</date><risdate>1995</risdate><abstract>Two synthetic routes to nanocrystalline III-V (13-15) materials are discussed. The first employs dehalosilylation reactions between Group III trihalides and E(SiMe3)3 (E = P, As) in hydrocarbon solvents affording nanocrystalline III-V semiconductors or their precursors. The second involves reactions of MX3 (M = Ga, X = Cl, I; M = In, X = Cl, I) in glymes with in situ synthesized (Na/K)3E (E = P, As, Sb) in aromatic solvents, yielding nanocrystalline GaP, GaAs, GaSb, InP, InAs and InSb after refluxing reaction mixtures. Materials are characterized by TEM, XRD, Elemental Analysis, NMR, UV-vis, and STM. STM images of InAs give particle size distributions and confirm sample conductivity. Scanning tunneling spectroscopy shows a larger bandgap for nanocrystalline InAs than for InAs wafers, consistent With quantum confinement. jg p3</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | AROMATIC COMPOUNDS ARSENIC Atomic and Molecular Physics and Spectroscopy BINARY COMPOUNDS CHLORIDES CONFINEMENT(GENERAL) Crystallography DEHALOSILYLATION REACTIONS DISTRIBUTION Electrical and Electronic Equipment GALLIUM ANTIMONIDES GALLIUM ARSENIDES GALLIUM PHOSPHIDES GROUP III COMPOUNDS GROUP IV COMPOUNDS GROUP V COMPOUNDS HALIDES HYDROCARBONS IMMOBILIZATION INDIUM ANTIMONIDES INDIUM PHOSPHIDES Inorganic Chemistry IODIDES MICROSCOPY MIXTURES NUCLEAR MAGNETIC RESONANCE ORGANIC SOLVENTS PARTICLE SIZE PHOSPHORUS Physical Chemistry QUANTUM THEORY RESPONSE RESTRAINT ROUTING SCANNING SEMICONDUCTORS SOLVENTS SPECTROSCOPY STM(SCANNING TUNNELING MICROSCOPY) SYNTHESIS TERNARY COMPOUNDS TUNNELING(ELECTRONICS) X RAY DIFFRACTION |
| title | Synthesis, Characterization and Immobilization of Nanocrystalline Binary and Ternary III-V (13-15) Compound Semiconductors |
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