Surface Second Harmonic Studies of Si(111)/Electrolyte and Si(111)/SiO2/ Electrolyte Interfaces
The optical second harmonic (SH) response from Si(111) electrode surfaces has been studied and has been found to be highly potential dependent. For both H-terminated Si(111) surfaces in NJ4F, and oxide covered surfaces biased in H2SO4, the phase and the amplitude display a potential dependence which...
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| creator | Fischer, P R Daschbach, J L Richmond, G L |
| description | The optical second harmonic (SH) response from Si(111) electrode surfaces has been studied and has been found to be highly potential dependent. For both H-terminated Si(111) surfaces in NJ4F, and oxide covered surfaces biased in H2SO4, the phase and the amplitude display a potential dependence which we attribute to field effect within the semiconductor space-charge region and at the surface of the Si(111) electrode. The studies are the first to demonstrate that for Si(1110)/oxide samples the potential dependence in the SH phase can be correlated with oxide thickness as demonstrated by examining samples of 0-40 Angstrom thickness. Si(111)/Oxide electrodes, Electrochemistry |
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For both H-terminated Si(111) surfaces in NJ4F, and oxide covered surfaces biased in H2SO4, the phase and the amplitude display a potential dependence which we attribute to field effect within the semiconductor space-charge region and at the surface of the Si(111) electrode. The studies are the first to demonstrate that for Si(1110)/oxide samples the potential dependence in the SH phase can be correlated with oxide thickness as demonstrated by examining samples of 0-40 Angstrom thickness. Si(111)/Oxide electrodes, Electrochemistry</description><language>eng</language><subject>AMMONIUM COMPOUNDS ; AMPLITUDE ; DEPENDENCE ; Electrical and Electronic Equipment ; ELECTROCHEMISTRY ; ELECTRODES ; ELECTROLYTES ; FLUORIDES ; HARMONICS ; Inorganic Chemistry ; INTERFACES ; OPTICAL PROPERTIES ; Optics ; OXIDES ; PHASE ; Physical Chemistry ; POTENTIAL ENERGY ; REGIONS ; RESPONSE ; SECOND HARMONIC GENERATION ; SEMICONDUCTORS ; SILICON ; SILICON DIOXIDE ; SPACE CHARGE ; SURFACES ; THICKNESS</subject><creationdate>1994</creationdate><rights>Approved for public release; distribution is unlimited.</rights><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,780,885,27567,27568</link.rule.ids><linktorsrc>$$Uhttps://apps.dtic.mil/sti/citations/ADA279450$$EView_record_in_DTIC$$FView_record_in_$$GDTIC$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Fischer, P R</creatorcontrib><creatorcontrib>Daschbach, J L</creatorcontrib><creatorcontrib>Richmond, G L</creatorcontrib><creatorcontrib>OREGON UNIV EUGENE DEPT OF CHEMISTRY</creatorcontrib><title>Surface Second Harmonic Studies of Si(111)/Electrolyte and Si(111)/SiO2/ Electrolyte Interfaces</title><description>The optical second harmonic (SH) response from Si(111) electrode surfaces has been studied and has been found to be highly potential dependent. For both H-terminated Si(111) surfaces in NJ4F, and oxide covered surfaces biased in H2SO4, the phase and the amplitude display a potential dependence which we attribute to field effect within the semiconductor space-charge region and at the surface of the Si(111) electrode. The studies are the first to demonstrate that for Si(1110)/oxide samples the potential dependence in the SH phase can be correlated with oxide thickness as demonstrated by examining samples of 0-40 Angstrom thickness. Si(111)/Oxide electrodes, Electrochemistry</description><subject>AMMONIUM COMPOUNDS</subject><subject>AMPLITUDE</subject><subject>DEPENDENCE</subject><subject>Electrical and Electronic Equipment</subject><subject>ELECTROCHEMISTRY</subject><subject>ELECTRODES</subject><subject>ELECTROLYTES</subject><subject>FLUORIDES</subject><subject>HARMONICS</subject><subject>Inorganic Chemistry</subject><subject>INTERFACES</subject><subject>OPTICAL PROPERTIES</subject><subject>Optics</subject><subject>OXIDES</subject><subject>PHASE</subject><subject>Physical Chemistry</subject><subject>POTENTIAL ENERGY</subject><subject>REGIONS</subject><subject>RESPONSE</subject><subject>SECOND HARMONIC GENERATION</subject><subject>SEMICONDUCTORS</subject><subject>SILICON</subject><subject>SILICON DIOXIDE</subject><subject>SPACE CHARGE</subject><subject>SURFACES</subject><subject>THICKNESS</subject><fulltext>true</fulltext><rsrctype>report</rsrctype><creationdate>1994</creationdate><recordtype>report</recordtype><sourceid>1RU</sourceid><recordid>eNrjZIgPLi1KS0xOVQhOTc7PS1HwSCzKzc_LTFYILilNyUwtVshPUwjO1DA0NNTUd81JTS4pys-pLElVSASqhYkHZ_ob6Ssgy3rmlaSCjS3mYWBNS8wpTuWF0twMMm6uIc4euiklmcnxxSWZeakl8Y4ujkbmliamBsYEpAGd3Tb9</recordid><startdate>19940513</startdate><enddate>19940513</enddate><creator>Fischer, P R</creator><creator>Daschbach, J L</creator><creator>Richmond, G L</creator><scope>1RU</scope><scope>BHM</scope></search><sort><creationdate>19940513</creationdate><title>Surface Second Harmonic Studies of Si(111)/Electrolyte and Si(111)/SiO2/ Electrolyte Interfaces</title><author>Fischer, P R ; Daschbach, J L ; Richmond, G L</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-dtic_stinet_ADA2794503</frbrgroupid><rsrctype>reports</rsrctype><prefilter>reports</prefilter><language>eng</language><creationdate>1994</creationdate><topic>AMMONIUM COMPOUNDS</topic><topic>AMPLITUDE</topic><topic>DEPENDENCE</topic><topic>Electrical and Electronic Equipment</topic><topic>ELECTROCHEMISTRY</topic><topic>ELECTRODES</topic><topic>ELECTROLYTES</topic><topic>FLUORIDES</topic><topic>HARMONICS</topic><topic>Inorganic Chemistry</topic><topic>INTERFACES</topic><topic>OPTICAL PROPERTIES</topic><topic>Optics</topic><topic>OXIDES</topic><topic>PHASE</topic><topic>Physical Chemistry</topic><topic>POTENTIAL ENERGY</topic><topic>REGIONS</topic><topic>RESPONSE</topic><topic>SECOND HARMONIC GENERATION</topic><topic>SEMICONDUCTORS</topic><topic>SILICON</topic><topic>SILICON DIOXIDE</topic><topic>SPACE CHARGE</topic><topic>SURFACES</topic><topic>THICKNESS</topic><toplevel>online_resources</toplevel><creatorcontrib>Fischer, P R</creatorcontrib><creatorcontrib>Daschbach, J L</creatorcontrib><creatorcontrib>Richmond, G L</creatorcontrib><creatorcontrib>OREGON UNIV EUGENE DEPT OF CHEMISTRY</creatorcontrib><collection>DTIC Technical Reports</collection><collection>DTIC STINET</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Fischer, P R</au><au>Daschbach, J L</au><au>Richmond, G L</au><aucorp>OREGON UNIV EUGENE DEPT OF CHEMISTRY</aucorp><format>book</format><genre>unknown</genre><ristype>RPRT</ristype><btitle>Surface Second Harmonic Studies of Si(111)/Electrolyte and Si(111)/SiO2/ Electrolyte Interfaces</btitle><date>1994-05-13</date><risdate>1994</risdate><abstract>The optical second harmonic (SH) response from Si(111) electrode surfaces has been studied and has been found to be highly potential dependent. For both H-terminated Si(111) surfaces in NJ4F, and oxide covered surfaces biased in H2SO4, the phase and the amplitude display a potential dependence which we attribute to field effect within the semiconductor space-charge region and at the surface of the Si(111) electrode. The studies are the first to demonstrate that for Si(1110)/oxide samples the potential dependence in the SH phase can be correlated with oxide thickness as demonstrated by examining samples of 0-40 Angstrom thickness. Si(111)/Oxide electrodes, Electrochemistry</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | AMMONIUM COMPOUNDS AMPLITUDE DEPENDENCE Electrical and Electronic Equipment ELECTROCHEMISTRY ELECTRODES ELECTROLYTES FLUORIDES HARMONICS Inorganic Chemistry INTERFACES OPTICAL PROPERTIES Optics OXIDES PHASE Physical Chemistry POTENTIAL ENERGY REGIONS RESPONSE SECOND HARMONIC GENERATION SEMICONDUCTORS SILICON SILICON DIOXIDE SPACE CHARGE SURFACES THICKNESS |
| title | Surface Second Harmonic Studies of Si(111)/Electrolyte and Si(111)/SiO2/ Electrolyte Interfaces |
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