Growth of Single Crystal Beta Silicon Carbide
Beta-SiC is a promising, wide bandgap material for high power electronic devices capable of operation at high temperatures. Its high saturation velocity, high breakdown electric field, and high thermal conductivity point to superior performance for high frequency applications. The successful fabrica...
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| creator | Yoo, Kee-Chang Ruderman, Warren |
| description | Beta-SiC is a promising, wide bandgap material for high power electronic devices capable of operation at high temperatures. Its high saturation velocity, high breakdown electric field, and high thermal conductivity point to superior performance for high frequency applications. The successful fabrication of Beta-SiC devices requires high quality films to be epitaxially grown on lattice-matched substrate materials. Single crystals of Beta-SiC offer the optimum substrate material for lattice matching. The major problem to be overcome in the growth of large single crystals of Beta-SiC is polytype alpha-SiC formation. Cubic Beta-SiC crystallizes only below 2000 deg C. Above this temperature, SiC undergoes a phase transformation from the Beta-to the alpha-phase. In Phase I, we investigated two crystal growth techniques: sublimation and gas-vapor transport. We were able to grow small 3C-SiC crystals by both methods.
Original contains color plates: All DTIC and NTIS reproductions will be in black and white. |
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Original contains color plates: All DTIC and NTIS reproductions will be in black and white.</description><subject>BREAKDOWN(ELECTRONIC THRESHOLD)</subject><subject>CARBON</subject><subject>CHEMICAL VAPOR DEPOSITION</subject><subject>CRYSTAL LATTICES</subject><subject>Crystallography</subject><subject>ELECTRIC FIELDS</subject><subject>Electrical and Electronic Equipment</subject><subject>Electricity and Magnetism</subject><subject>ELECTRONICS</subject><subject>EPITAXIAL GROWTH</subject><subject>FABRICATION</subject><subject>GAS-VAPOR TRANSPORT</subject><subject>GENERATORS</subject><subject>HIGH FREQUENCY</subject><subject>HIGH POWER</subject><subject>HIGH TEMPERATURE</subject><subject>Inorganic Chemistry</subject><subject>LATTICE MATCHING</subject><subject>NAVY</subject><subject>OPTICAL MATERIALS</subject><subject>PHASE TRANSFORMATIONS</subject><subject>POWER EQUIPMENT</subject><subject>SATURATION</subject><subject>SEMICONDUCTORS</subject><subject>SILICON CARBIDES</subject><subject>SINGLE CRYSTALS</subject><subject>SUBLIMATION</subject><subject>SUBSTRATES</subject><subject>THERMAL CONDUCTIVITY</subject><subject>VELOCITY</subject><subject>WIDE BANDGAP</subject><fulltext>true</fulltext><rsrctype>report</rsrctype><creationdate>1992</creationdate><recordtype>report</recordtype><sourceid>1RU</sourceid><recordid>eNrjZNB1L8ovL8lQyE9TCM7MS89JVXAuqiwuScxRcEotSQSK5WQm5-cpOCcWJWWmpPIwsKYl5hSn8kJpbgYZN9cQZw_dlJLM5Pjiksy81JJ4RxdHI3NzA1MDYwLSANiIJoU</recordid><startdate>199212</startdate><enddate>199212</enddate><creator>Yoo, Kee-Chang</creator><creator>Ruderman, Warren</creator><scope>1RU</scope><scope>BHM</scope></search><sort><creationdate>199212</creationdate><title>Growth of Single Crystal Beta Silicon Carbide</title><author>Yoo, Kee-Chang ; Ruderman, Warren</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-dtic_stinet_ADA2770503</frbrgroupid><rsrctype>reports</rsrctype><prefilter>reports</prefilter><language>eng</language><creationdate>1992</creationdate><topic>BREAKDOWN(ELECTRONIC THRESHOLD)</topic><topic>CARBON</topic><topic>CHEMICAL VAPOR DEPOSITION</topic><topic>CRYSTAL LATTICES</topic><topic>Crystallography</topic><topic>ELECTRIC FIELDS</topic><topic>Electrical and Electronic Equipment</topic><topic>Electricity and Magnetism</topic><topic>ELECTRONICS</topic><topic>EPITAXIAL GROWTH</topic><topic>FABRICATION</topic><topic>GAS-VAPOR TRANSPORT</topic><topic>GENERATORS</topic><topic>HIGH FREQUENCY</topic><topic>HIGH POWER</topic><topic>HIGH TEMPERATURE</topic><topic>Inorganic Chemistry</topic><topic>LATTICE MATCHING</topic><topic>NAVY</topic><topic>OPTICAL MATERIALS</topic><topic>PHASE TRANSFORMATIONS</topic><topic>POWER EQUIPMENT</topic><topic>SATURATION</topic><topic>SEMICONDUCTORS</topic><topic>SILICON CARBIDES</topic><topic>SINGLE CRYSTALS</topic><topic>SUBLIMATION</topic><topic>SUBSTRATES</topic><topic>THERMAL CONDUCTIVITY</topic><topic>VELOCITY</topic><topic>WIDE BANDGAP</topic><toplevel>online_resources</toplevel><creatorcontrib>Yoo, Kee-Chang</creatorcontrib><creatorcontrib>Ruderman, Warren</creatorcontrib><creatorcontrib>INRAD INC NORTHVALE NJ</creatorcontrib><collection>DTIC Technical Reports</collection><collection>DTIC STINET</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Yoo, Kee-Chang</au><au>Ruderman, Warren</au><aucorp>INRAD INC NORTHVALE NJ</aucorp><format>book</format><genre>unknown</genre><ristype>RPRT</ristype><btitle>Growth of Single Crystal Beta Silicon Carbide</btitle><date>1992-12</date><risdate>1992</risdate><abstract>Beta-SiC is a promising, wide bandgap material for high power electronic devices capable of operation at high temperatures. Its high saturation velocity, high breakdown electric field, and high thermal conductivity point to superior performance for high frequency applications. The successful fabrication of Beta-SiC devices requires high quality films to be epitaxially grown on lattice-matched substrate materials. Single crystals of Beta-SiC offer the optimum substrate material for lattice matching. The major problem to be overcome in the growth of large single crystals of Beta-SiC is polytype alpha-SiC formation. Cubic Beta-SiC crystallizes only below 2000 deg C. Above this temperature, SiC undergoes a phase transformation from the Beta-to the alpha-phase. In Phase I, we investigated two crystal growth techniques: sublimation and gas-vapor transport. We were able to grow small 3C-SiC crystals by both methods.
Original contains color plates: All DTIC and NTIS reproductions will be in black and white.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BREAKDOWN(ELECTRONIC THRESHOLD) CARBON CHEMICAL VAPOR DEPOSITION CRYSTAL LATTICES Crystallography ELECTRIC FIELDS Electrical and Electronic Equipment Electricity and Magnetism ELECTRONICS EPITAXIAL GROWTH FABRICATION GAS-VAPOR TRANSPORT GENERATORS HIGH FREQUENCY HIGH POWER HIGH TEMPERATURE Inorganic Chemistry LATTICE MATCHING NAVY OPTICAL MATERIALS PHASE TRANSFORMATIONS POWER EQUIPMENT SATURATION SEMICONDUCTORS SILICON CARBIDES SINGLE CRYSTALS SUBLIMATION SUBSTRATES THERMAL CONDUCTIVITY VELOCITY WIDE BANDGAP |
| title | Growth of Single Crystal Beta Silicon Carbide |
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