Investigations of Photovoltaic Ferroelectric-Semiconductor Nonvolatile Memory
The feasibility of a new kind of nonvolatile digital memory is proposed and examined. The basis of the memory is an anomalous photovoltaic phenomenon found in ferroelectric ceramics--a photovoltage with a polarity that depends on the direction of the remanent polarization. Described are proposed mem...
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| description | The feasibility of a new kind of nonvolatile digital memory is proposed and examined. The basis of the memory is an anomalous photovoltaic phenomenon found in ferroelectric ceramics--a photovoltage with a polarity that depends on the direction of the remanent polarization. Described are proposed memory cell structures that function in matrix arrangements as nonvolatile read/write random access memory or electrically alterable programmable read-only memory. Test results obtained with an experimental test unit also are described. Included is a survey of methods for producing ferroelectric films. (Author) |
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| fullrecord | <record><control><sourceid>dtic_1RU</sourceid><recordid>TN_cdi_dtic_stinet_ADA099516</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>ADA099516</sourcerecordid><originalsourceid>FETCH-dtic_stinet_ADA0995163</originalsourceid><addsrcrecordid>eNrjZPD1zCtLLS7JTE8syczPK1bIT1MIyMgvyS_LzylJzExWcEstKspPzUlNLinKTNYNTs3NTM7PSylNLskvUvDLzwMqA2rMSVXwTc3NL6rkYWBNS8wpTuWF0twMMm6uIc4euiklmcnxQGvyUkviHV0cDSwtTQ3NjAlIAwBL_DSN</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>report</recordtype></control><display><type>report</type><title>Investigations of Photovoltaic Ferroelectric-Semiconductor Nonvolatile Memory</title><source>DTIC Technical Reports</source><creator>Brody,Philip S</creator><creatorcontrib>Brody,Philip S ; HARRY DIAMOND LABS ADELPHI MD</creatorcontrib><description>The feasibility of a new kind of nonvolatile digital memory is proposed and examined. The basis of the memory is an anomalous photovoltaic phenomenon found in ferroelectric ceramics--a photovoltage with a polarity that depends on the direction of the remanent polarization. Described are proposed memory cell structures that function in matrix arrangements as nonvolatile read/write random access memory or electrically alterable programmable read-only memory. Test results obtained with an experimental test unit also are described. Included is a survey of methods for producing ferroelectric films. (Author)</description><language>eng</language><subject>AS91A ; CERAMIC MATERIALS ; Computer Hardware ; DIGITAL COMPUTERS ; Electrical and Electronic Equipment ; FERROELECTRIC MATERIALS ; FIELD EFFECT TRANSISTORS ; HYBRID CIRCUITS ; LPN-HDL-A100C4 ; MEMORY DEVICES ; NONVOLATILE MEMORIES ; PE61101A ; PHOTOVOLTAIC EFFECT ; POLARIZATION ; RANDOM ACCESS COMPUTER STORAGE ; READ ONLY MEMORIES ; SCHEMATIC DIAGRAMS ; SEMICONDUCTORS ; SUBSTRATES ; THIN FILMS ; WAVEFORMS</subject><creationdate>1981</creationdate><rights>APPROVED FOR PUBLIC RELEASE</rights><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,776,881,27546,27547</link.rule.ids><linktorsrc>$$Uhttps://apps.dtic.mil/sti/citations/ADA099516$$EView_record_in_DTIC$$FView_record_in_$$GDTIC$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Brody,Philip S</creatorcontrib><creatorcontrib>HARRY DIAMOND LABS ADELPHI MD</creatorcontrib><title>Investigations of Photovoltaic Ferroelectric-Semiconductor Nonvolatile Memory</title><description>The feasibility of a new kind of nonvolatile digital memory is proposed and examined. The basis of the memory is an anomalous photovoltaic phenomenon found in ferroelectric ceramics--a photovoltage with a polarity that depends on the direction of the remanent polarization. Described are proposed memory cell structures that function in matrix arrangements as nonvolatile read/write random access memory or electrically alterable programmable read-only memory. Test results obtained with an experimental test unit also are described. Included is a survey of methods for producing ferroelectric films. (Author)</description><subject>AS91A</subject><subject>CERAMIC MATERIALS</subject><subject>Computer Hardware</subject><subject>DIGITAL COMPUTERS</subject><subject>Electrical and Electronic Equipment</subject><subject>FERROELECTRIC MATERIALS</subject><subject>FIELD EFFECT TRANSISTORS</subject><subject>HYBRID CIRCUITS</subject><subject>LPN-HDL-A100C4</subject><subject>MEMORY DEVICES</subject><subject>NONVOLATILE MEMORIES</subject><subject>PE61101A</subject><subject>PHOTOVOLTAIC EFFECT</subject><subject>POLARIZATION</subject><subject>RANDOM ACCESS COMPUTER STORAGE</subject><subject>READ ONLY MEMORIES</subject><subject>SCHEMATIC DIAGRAMS</subject><subject>SEMICONDUCTORS</subject><subject>SUBSTRATES</subject><subject>THIN FILMS</subject><subject>WAVEFORMS</subject><fulltext>true</fulltext><rsrctype>report</rsrctype><creationdate>1981</creationdate><recordtype>report</recordtype><sourceid>1RU</sourceid><recordid>eNrjZPD1zCtLLS7JTE8syczPK1bIT1MIyMgvyS_LzylJzExWcEstKspPzUlNLinKTNYNTs3NTM7PSylNLskvUvDLzwMqA2rMSVXwTc3NL6rkYWBNS8wpTuWF0twMMm6uIc4euiklmcnxQGvyUkviHV0cDSwtTQ3NjAlIAwBL_DSN</recordid><startdate>198103</startdate><enddate>198103</enddate><creator>Brody,Philip S</creator><scope>1RU</scope><scope>BHM</scope></search><sort><creationdate>198103</creationdate><title>Investigations of Photovoltaic Ferroelectric-Semiconductor Nonvolatile Memory</title><author>Brody,Philip S</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-dtic_stinet_ADA0995163</frbrgroupid><rsrctype>reports</rsrctype><prefilter>reports</prefilter><language>eng</language><creationdate>1981</creationdate><topic>AS91A</topic><topic>CERAMIC MATERIALS</topic><topic>Computer Hardware</topic><topic>DIGITAL COMPUTERS</topic><topic>Electrical and Electronic Equipment</topic><topic>FERROELECTRIC MATERIALS</topic><topic>FIELD EFFECT TRANSISTORS</topic><topic>HYBRID CIRCUITS</topic><topic>LPN-HDL-A100C4</topic><topic>MEMORY DEVICES</topic><topic>NONVOLATILE MEMORIES</topic><topic>PE61101A</topic><topic>PHOTOVOLTAIC EFFECT</topic><topic>POLARIZATION</topic><topic>RANDOM ACCESS COMPUTER STORAGE</topic><topic>READ ONLY MEMORIES</topic><topic>SCHEMATIC DIAGRAMS</topic><topic>SEMICONDUCTORS</topic><topic>SUBSTRATES</topic><topic>THIN FILMS</topic><topic>WAVEFORMS</topic><toplevel>online_resources</toplevel><creatorcontrib>Brody,Philip S</creatorcontrib><creatorcontrib>HARRY DIAMOND LABS ADELPHI MD</creatorcontrib><collection>DTIC Technical Reports</collection><collection>DTIC STINET</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Brody,Philip S</au><aucorp>HARRY DIAMOND LABS ADELPHI MD</aucorp><format>book</format><genre>unknown</genre><ristype>RPRT</ristype><btitle>Investigations of Photovoltaic Ferroelectric-Semiconductor Nonvolatile Memory</btitle><date>1981-03</date><risdate>1981</risdate><abstract>The feasibility of a new kind of nonvolatile digital memory is proposed and examined. The basis of the memory is an anomalous photovoltaic phenomenon found in ferroelectric ceramics--a photovoltage with a polarity that depends on the direction of the remanent polarization. Described are proposed memory cell structures that function in matrix arrangements as nonvolatile read/write random access memory or electrically alterable programmable read-only memory. Test results obtained with an experimental test unit also are described. Included is a survey of methods for producing ferroelectric films. (Author)</abstract><oa>free_for_read</oa></addata></record> |
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| source | DTIC Technical Reports |
| subjects | AS91A CERAMIC MATERIALS Computer Hardware DIGITAL COMPUTERS Electrical and Electronic Equipment FERROELECTRIC MATERIALS FIELD EFFECT TRANSISTORS HYBRID CIRCUITS LPN-HDL-A100C4 MEMORY DEVICES NONVOLATILE MEMORIES PE61101A PHOTOVOLTAIC EFFECT POLARIZATION RANDOM ACCESS COMPUTER STORAGE READ ONLY MEMORIES SCHEMATIC DIAGRAMS SEMICONDUCTORS SUBSTRATES THIN FILMS WAVEFORMS |
| title | Investigations of Photovoltaic Ferroelectric-Semiconductor Nonvolatile Memory |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-23T15%3A26%3A27IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-dtic_1RU&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=unknown&rft.btitle=Investigations%20of%20Photovoltaic%20Ferroelectric-Semiconductor%20Nonvolatile%20Memory&rft.au=Brody,Philip%20S&rft.aucorp=HARRY%20DIAMOND%20LABS%20ADELPHI%20MD&rft.date=1981-03&rft_id=info:doi/&rft_dat=%3Cdtic_1RU%3EADA099516%3C/dtic_1RU%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |