P-Type Gallium Arsenide Epitaxial Growth

At the beginning of this program, the rapid development of double-drift GaAs IMPATT diodes at X-band was being retarded by limited knowledge of the optimum growth conditions and the basic physical properties of p-type GaAs. Although p-type material with doping levels suitable for X-band double-drift...

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Bibliographische Detailangaben
Hauptverfasser:	Steel,S R, Johnson,K K, Lauterwasser,B D, Barlas,A D, Holway,L , Jr
Format:	Report
Sprache:	eng
Schlagworte:	ALKYL RADICALS COEFFICIENTS DOPING DRIFT ELECTRIC FIELDS EPITAXIAL GROWTH EXPERIMENTAL DATA GALLIUM ARSENIDES Hole velocities HOLES(ELECTRON DEFICIENCIES) IMPATT DIODES IODIDES IONIZATION KA BAND P type dopants P TYPE SEMICONDUCTORS PE62204F Physical Chemistry PHYSICAL PROPERTIES PROBLEM SOLVING REACTION KINETICS Read type diodes REPRODUCIBILITY Solid State Physics VELOCITY WAFERS WUAFAL20020146 X BAND ZINC COMPOUNDS Zinc iodide
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