Properties of Silicon Implanted with Arsenic Through Silicon Dioxide

The properties of silicon after annealing of arsenic implantations through silicon dioxide are studied, and compared with those resulting from arsenic implantations into bare silicon surfaces. Photoluminescence studies of radiation damaged silicon establish the 0.970 eV peak as arising from a carbon-dependent center. The same studies also confirm that the 0.790 eV luminescence arises from an oxygen dependent center, and suggest that this center may depend on carbon as well. With the oxygen dependence of the center responsible for the 0.790 eV luminescence established, it is possible to monitor the presence of excess oxygen in silicon by the presence of this peak in the recombination spectra of silicon after irradiation. Thus, observation of 0.790 eV luminescence from float zone grown silicon samples implanted with arsenic through silicon dioxide, and not from identical samples in which the silicon dioxide was chemically removed prior to arsenic implantation, is interpreted as direct evidence for the recoil implantation of oxygen into the silicon from the silicon dioxide layer. The effect of recoil-implanted oxygen on the transport properties of silicon implanted with arsenic to fluences of 10 to the 15th power/sq cm and 50 to the 15th power/ s of cm is then examined. Sheet resistivity and sheet Hall coefficient measurements following various annealing stages indicate identical recovery for through-oxide implants and for bare surface implants. Doctoral thesis.