Radiation Damage to Junction and MOS Transistors

Investigations of radiation induced damage of such transistors are reported which find application in electronic equipments explosed to nuclear sources of high intensity. The mechanism of the effect of radiation is described and it is shown that in the case of nuclear reactors the effect of fast neu...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Demes,S, Pellionisz,P, Szlavik,F
Format:	Report
Sprache:	eng
Schlagworte:	Electrical and Electronic Equipment Field effect transistors Gamma rays Germanium Hungary Metal oxide semiconductors Metal oxide transistors Neutron irradiation Radiation effects Radiation shielding Silicon Translations
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!