Integrated Optical Circuits

A detailed study has been made of electroabsorption avalanche photodiodes (EAP) fabricated in high-purity n-type epitaxial GaAs, and the attenuation of high-purity planar GaAs waveguides has been examined at wavelengths close to the absorption edge. The results open up the attractive possibility of...

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Bibliographische Detailangaben
1. Verfasser:	Melngailis, Ivars
Format:	Report
Sprache:	eng
Schlagworte:	ABSORPTION ACOUSTIC SURFACE WAVES ACOUSTIC WAVES Acoustooptic and Optoacoustic Devices ACOUSTOOPTICS AVALANCHE DIODES CADMIUM TELLURIDES CARBON DIOXIDE LASERS EPITAXIAL GROWTH Fiber Optics and Integrated Optics HETERODYNE DETECTION HETERODYNING Infrared Detection and Detectors INFRARED DETECTORS INFRARED LASERS INTEGRATED CIRCUITS INTEGRATED OPTICS LEAD COMPOUNDS LEAD TELLURIDES Line, Surface and Bulk Acoustic Wave Devices MERCURY COMPOUNDS MERCURY TELLURIDES OPTICAL EQUIPMENT OPTICAL MODULATORS OPTICAL WAVEGUIDES PHOTODIODES PROTON BOMBARDMENT SCHOTTKY BARRIER DEVICES SEMICONDUCTOR DEVICES SEMICONDUCTORS SURFACE WAVES TELLURIDES TIN COMPOUNDS TIN TELLURIDES
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