Development of a Photoelectrochemical Etch Process to Enable Heterogeneous Substrate Integration of Epitaxial III-Nitride Semiconductors

A process is developed to transfer epitaxially grown III-nitride films onto substrates more applicable to the desired application. The substrates for epitaxial growth of these films are limited to single-crystal sapphire, gallium nitride (GaN)-on-sapphire templates, or free-standing GaN. However, th...

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Hauptverfasser:	Parameshwaran,Vijay, Chung,Roy B, Kelley,Stephen, Olver,Kimberley, Connelly,Blair C, Sampath,Anand, Reed,Meredith L
Format:	Report
Sprache:	eng
Schlagworte:	Electrical and Electronic Equipment electrochemistry EPITAXIAL GROWTH etching gallium nitrides heterogeneous integration III-V nitrides lasers photoelectrochemistry photonics Physical Chemistry SCANNING ELECTRON MICROSCOPES SEMICONDUCTORS substrate transfer substrates
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