Transient Radiation Effects Research

BY ELECTRONS OF VARIOUS ENERGIES. The results of optical and electrical studies on GaAs irradiated at room temperature with 1- and 30-MeV electrons, together with postirradiation annealing data, are presented. Electron irradiation of high-purity n- and p-type silicon yielded information on the energ...

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Bibliographische Detailangaben
Hauptverfasser:	Azarewicz,Joseph L, Berger,Robert A, Colwell,Joseph F, Green,Barry A, Flanagan,Terry M
Format:	Report
Sprache:	eng
Schlagworte:	ANNEALING CAPACITORS CARRIER DENSITY DAMAGE DEFECTS(MATERIALS) DIELECTRICS Electrical and Electronic Equipment ELECTRON IRRADIATION GALLIUM ARSENIDES IONIZATION MINORITY CARRIER LIFETIME NEUTRON REACTIONS POLYMERS Radioactiv, Radioactive Wastes & Fission Prod RELIABILITY(ELECTRONICS) SEMICONDUCTOR DEVICES SEMICONDUCTORS SILICON Solid State Physics TRANSIENT RADIATION EFFECTS(ELECTRONICS) TRANSISTORS
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