Interaction Between Amorphous Semiconductor Thin Film and Electron Beam

The research program has been directed to obtaining a quantitative understanding of the electron beam recording and readout sensitivity characteristics of amorphous semiconductor thin films. The effort in measuring the electron beam readout sensitivity of various amorphous semiconductor thin films h...

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Bibliographische Detailangaben
1. Verfasser:	Chen, Arthur C M
Format:	Report
Sprache:	eng
Schlagworte:	AMORPHOUS MATERIALS ARSENIDES Computer Hardware CRYSTALLIZATION ELECTRICAL PROPERTIES ELECTRON BEAMS GERMANIUM ARSENIDE GERMANIUM COMPOUNDS NONDESTRUCTIVE READOUT SYSTEMS RELIABILITY(ELECTRONICS) SEMICONDUCTING FILMS SEMICONDUCTOR COMPUTER STORAGE SEMICONDUCTORS Solid State Physics TELLURIUM COMPOUNDS THERMAL PROPERTIES THIN FILM STORAGE DEVICES
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