Interaction Between Amorphous Semiconductor Thin Film and Electron Beam
The research program has been directed to obtaining a quantitative understanding of the electron beam recording and readout sensitivity characteristics of amorphous semiconductor thin films. The effort in measuring the electron beam readout sensitivity of various amorphous semiconductor thin films h...
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| creator | Chen, Arthur C M |
| description | The research program has been directed to obtaining a quantitative understanding of the electron beam recording and readout sensitivity characteristics of amorphous semiconductor thin films. The effort in measuring the electron beam readout sensitivity of various amorphous semiconductor thin films has been continued. The results on Ge15Te81As4 shows that contrary to earlier work, the crystalline phase has a higher secondary electron yield than the amorphous phase. A research effort to understand electron beam enhanced crystallization process in amorphous semiconductor thin film has been initiated. Some preliminary results on light effect on crystallization temperature are reported. The process and thickness dependence of crystallization temperature, T(x), in Ge-Te-As thin films is investigated.
See also Semiannual technical rept. no. 1, AD0749282. |
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See also Semiannual technical rept. no. 1, AD0749282.</description><language>eng</language><subject>AMORPHOUS MATERIALS ; ARSENIDES ; Computer Hardware ; CRYSTALLIZATION ; ELECTRICAL PROPERTIES ; ELECTRON BEAMS ; GERMANIUM ARSENIDE ; GERMANIUM COMPOUNDS ; NONDESTRUCTIVE READOUT SYSTEMS ; RELIABILITY(ELECTRONICS) ; SEMICONDUCTING FILMS ; SEMICONDUCTOR COMPUTER STORAGE ; SEMICONDUCTORS ; Solid State Physics ; TELLURIUM COMPOUNDS ; THERMAL PROPERTIES ; THIN FILM STORAGE DEVICES</subject><creationdate>1973</creationdate><rights>Approved for public release; distribution is unlimited. Document partially illegible.</rights><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,780,885,27567,27568</link.rule.ids><linktorsrc>$$Uhttps://apps.dtic.mil/sti/citations/AD0763253$$EView_record_in_DTIC$$FView_record_in_$$GDTIC$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Chen, Arthur C M</creatorcontrib><creatorcontrib>GENERAL ELECTRIC CORPORATE RESEARCH AND DEVELOPMENT SCHENECTADY NY</creatorcontrib><title>Interaction Between Amorphous Semiconductor Thin Film and Electron Beam</title><description>The research program has been directed to obtaining a quantitative understanding of the electron beam recording and readout sensitivity characteristics of amorphous semiconductor thin films. The effort in measuring the electron beam readout sensitivity of various amorphous semiconductor thin films has been continued. The results on Ge15Te81As4 shows that contrary to earlier work, the crystalline phase has a higher secondary electron yield than the amorphous phase. A research effort to understand electron beam enhanced crystallization process in amorphous semiconductor thin film has been initiated. Some preliminary results on light effect on crystallization temperature are reported. The process and thickness dependence of crystallization temperature, T(x), in Ge-Te-As thin films is investigated.
See also Semiannual technical rept. no. 1, AD0749282.</description><subject>AMORPHOUS MATERIALS</subject><subject>ARSENIDES</subject><subject>Computer Hardware</subject><subject>CRYSTALLIZATION</subject><subject>ELECTRICAL PROPERTIES</subject><subject>ELECTRON BEAMS</subject><subject>GERMANIUM ARSENIDE</subject><subject>GERMANIUM COMPOUNDS</subject><subject>NONDESTRUCTIVE READOUT SYSTEMS</subject><subject>RELIABILITY(ELECTRONICS)</subject><subject>SEMICONDUCTING FILMS</subject><subject>SEMICONDUCTOR COMPUTER STORAGE</subject><subject>SEMICONDUCTORS</subject><subject>Solid State Physics</subject><subject>TELLURIUM COMPOUNDS</subject><subject>THERMAL PROPERTIES</subject><subject>THIN FILM STORAGE DEVICES</subject><fulltext>true</fulltext><rsrctype>report</rsrctype><creationdate>1973</creationdate><recordtype>report</recordtype><sourceid>1RU</sourceid><recordid>eNrjZHD3zCtJLUpMLsnMz1NwSi0pT03NU3DMzS8qyMgvLVYITs3NTM7PSylNLskvUgjJyMxTcMvMyVVIzEtRcM1JTS4pAmtLzOVhYE1LzClO5YXS3Awybq4hzh66KSWZyfHFJZl5qSXxji4G5mbGRqbGxgSkAVC5MKI</recordid><startdate>19730531</startdate><enddate>19730531</enddate><creator>Chen, Arthur C M</creator><scope>1RU</scope><scope>BHM</scope></search><sort><creationdate>19730531</creationdate><title>Interaction Between Amorphous Semiconductor Thin Film and Electron Beam</title><author>Chen, Arthur C M</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-dtic_stinet_AD07632533</frbrgroupid><rsrctype>reports</rsrctype><prefilter>reports</prefilter><language>eng</language><creationdate>1973</creationdate><topic>AMORPHOUS MATERIALS</topic><topic>ARSENIDES</topic><topic>Computer Hardware</topic><topic>CRYSTALLIZATION</topic><topic>ELECTRICAL PROPERTIES</topic><topic>ELECTRON BEAMS</topic><topic>GERMANIUM ARSENIDE</topic><topic>GERMANIUM COMPOUNDS</topic><topic>NONDESTRUCTIVE READOUT SYSTEMS</topic><topic>RELIABILITY(ELECTRONICS)</topic><topic>SEMICONDUCTING FILMS</topic><topic>SEMICONDUCTOR COMPUTER STORAGE</topic><topic>SEMICONDUCTORS</topic><topic>Solid State Physics</topic><topic>TELLURIUM COMPOUNDS</topic><topic>THERMAL PROPERTIES</topic><topic>THIN FILM STORAGE DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>Chen, Arthur C M</creatorcontrib><creatorcontrib>GENERAL ELECTRIC CORPORATE RESEARCH AND DEVELOPMENT SCHENECTADY NY</creatorcontrib><collection>DTIC Technical Reports</collection><collection>DTIC STINET</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Chen, Arthur C M</au><aucorp>GENERAL ELECTRIC CORPORATE RESEARCH AND DEVELOPMENT SCHENECTADY NY</aucorp><format>book</format><genre>unknown</genre><ristype>RPRT</ristype><btitle>Interaction Between Amorphous Semiconductor Thin Film and Electron Beam</btitle><date>1973-05-31</date><risdate>1973</risdate><abstract>The research program has been directed to obtaining a quantitative understanding of the electron beam recording and readout sensitivity characteristics of amorphous semiconductor thin films. The effort in measuring the electron beam readout sensitivity of various amorphous semiconductor thin films has been continued. The results on Ge15Te81As4 shows that contrary to earlier work, the crystalline phase has a higher secondary electron yield than the amorphous phase. A research effort to understand electron beam enhanced crystallization process in amorphous semiconductor thin film has been initiated. Some preliminary results on light effect on crystallization temperature are reported. The process and thickness dependence of crystallization temperature, T(x), in Ge-Te-As thin films is investigated.
See also Semiannual technical rept. no. 1, AD0749282.</abstract><oa>free_for_read</oa></addata></record> |
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| source | DTIC Technical Reports |
| subjects | AMORPHOUS MATERIALS ARSENIDES Computer Hardware CRYSTALLIZATION ELECTRICAL PROPERTIES ELECTRON BEAMS GERMANIUM ARSENIDE GERMANIUM COMPOUNDS NONDESTRUCTIVE READOUT SYSTEMS RELIABILITY(ELECTRONICS) SEMICONDUCTING FILMS SEMICONDUCTOR COMPUTER STORAGE SEMICONDUCTORS Solid State Physics TELLURIUM COMPOUNDS THERMAL PROPERTIES THIN FILM STORAGE DEVICES |
| title | Interaction Between Amorphous Semiconductor Thin Film and Electron Beam |
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