FANO FACTOR FACT AND FALLACY
By definition, the Fano factor (F) is an intrinsic material constant which reflects the ultimate detector resolution. The paper points out the difficulties associated with Fano factor measurements; attempts to clarify the mechanisms of some apparently anomalous behavior frequently observed in solid...
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creator | Zulliger,H. R Aitken,D. W |
description | By definition, the Fano factor (F) is an intrinsic material constant which reflects the ultimate detector resolution. The paper points out the difficulties associated with Fano factor measurements; attempts to clarify the mechanisms of some apparently anomalous behavior frequently observed in solid state detectors; presents some new experimental results for F in silicon and germanium; and derives a phenomological model for the average energy expended to produce an electron-hole pair (epsilon), which is then used to predict semitheoretical values of F. |
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The paper points out the difficulties associated with Fano factor measurements; attempts to clarify the mechanisms of some apparently anomalous behavior frequently observed in solid state detectors; presents some new experimental results for F in silicon and germanium; and derives a phenomological model for the average energy expended to produce an electron-hole pair (epsilon), which is then used to predict semitheoretical values of F.</description><language>eng</language><subject>ELECTRON DENSITY ; FANO FACTOR ; GAMMA COUNTERS ; GAMMA RAY SCATTERING ; GERMANIUM ; IONIZATION ; Nuclear Instrumentation ; PHOTOELECTRIC EFFECT ; RESOLUTION ; SEMICONDUCTORS ; SILICON ; SOLID STATE COUNTERS ; Solid State Physics</subject><creationdate>1970</creationdate><rights>APPROVED FOR PUBLIC RELEASE</rights><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,780,885,27567,27568</link.rule.ids><linktorsrc>$$Uhttps://apps.dtic.mil/sti/citations/AD0707095$$EView_record_in_DTIC$$FView_record_in_$$GDTIC$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Zulliger,H. 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The paper points out the difficulties associated with Fano factor measurements; attempts to clarify the mechanisms of some apparently anomalous behavior frequently observed in solid state detectors; presents some new experimental results for F in silicon and germanium; and derives a phenomological model for the average energy expended to produce an electron-hole pair (epsilon), which is then used to predict semitheoretical values of F.</description><subject>ELECTRON DENSITY</subject><subject>FANO FACTOR</subject><subject>GAMMA COUNTERS</subject><subject>GAMMA RAY SCATTERING</subject><subject>GERMANIUM</subject><subject>IONIZATION</subject><subject>Nuclear Instrumentation</subject><subject>PHOTOELECTRIC EFFECT</subject><subject>RESOLUTION</subject><subject>SEMICONDUCTORS</subject><subject>SILICON</subject><subject>SOLID STATE COUNTERS</subject><subject>Solid State Physics</subject><fulltext>true</fulltext><rsrctype>report</rsrctype><creationdate>1970</creationdate><recordtype>report</recordtype><sourceid>1RU</sourceid><recordid>eNrjZJBxc_TzV3BzdA7xDwJTCo5-LkCGj4-jcyQPA2taYk5xKi-U5gYqdw1x9tBNKclMji8uycxLLYl3dDEwB0JLU2MC0gABex1l</recordid><startdate>197003</startdate><enddate>197003</enddate><creator>Zulliger,H. R</creator><creator>Aitken,D. W</creator><scope>1RU</scope><scope>BHM</scope></search><sort><creationdate>197003</creationdate><title>FANO FACTOR FACT AND FALLACY</title><author>Zulliger,H. R ; Aitken,D. W</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-dtic_stinet_AD07070953</frbrgroupid><rsrctype>reports</rsrctype><prefilter>reports</prefilter><language>eng</language><creationdate>1970</creationdate><topic>ELECTRON DENSITY</topic><topic>FANO FACTOR</topic><topic>GAMMA COUNTERS</topic><topic>GAMMA RAY SCATTERING</topic><topic>GERMANIUM</topic><topic>IONIZATION</topic><topic>Nuclear Instrumentation</topic><topic>PHOTOELECTRIC EFFECT</topic><topic>RESOLUTION</topic><topic>SEMICONDUCTORS</topic><topic>SILICON</topic><topic>SOLID STATE COUNTERS</topic><topic>Solid State Physics</topic><toplevel>online_resources</toplevel><creatorcontrib>Zulliger,H. R</creatorcontrib><creatorcontrib>Aitken,D. W</creatorcontrib><creatorcontrib>STANFORD UNIV CALIF HIGH ENERGY PHYSICS LAB</creatorcontrib><collection>DTIC Technical Reports</collection><collection>DTIC STINET</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Zulliger,H. R</au><au>Aitken,D. W</au><aucorp>STANFORD UNIV CALIF HIGH ENERGY PHYSICS LAB</aucorp><format>book</format><genre>unknown</genre><ristype>RPRT</ristype><btitle>FANO FACTOR FACT AND FALLACY</btitle><date>1970-03</date><risdate>1970</risdate><abstract>By definition, the Fano factor (F) is an intrinsic material constant which reflects the ultimate detector resolution. The paper points out the difficulties associated with Fano factor measurements; attempts to clarify the mechanisms of some apparently anomalous behavior frequently observed in solid state detectors; presents some new experimental results for F in silicon and germanium; and derives a phenomological model for the average energy expended to produce an electron-hole pair (epsilon), which is then used to predict semitheoretical values of F.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | ELECTRON DENSITY FANO FACTOR GAMMA COUNTERS GAMMA RAY SCATTERING GERMANIUM IONIZATION Nuclear Instrumentation PHOTOELECTRIC EFFECT RESOLUTION SEMICONDUCTORS SILICON SOLID STATE COUNTERS Solid State Physics |
title | FANO FACTOR FACT AND FALLACY |
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