RADIATION EFFECTS IN SILICON AND GERMANIUM
The report describes several related studies of radiation effects in silicon and germanium. Theoretical studies have been performed of recombination behavior at disordered regions and of the influence of traps on steady-state lifetime. These studies apply whether the defects are introduced by irradi...
Gespeichert in:
| Hauptverfasser: | , , , |
|---|---|
| Format: | Report |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | Curtis,Orlie L , Jr Base,Ralph F Germano,Carl A Srour,Joseph R |
| description | The report describes several related studies of radiation effects in silicon and germanium. Theoretical studies have been performed of recombination behavior at disordered regions and of the influence of traps on steady-state lifetime. These studies apply whether the defects are introduced by irradiation or not. The dependence of steady-state lifetime on excess density was used extensively in experimental studies to determine recombination parameters. In conjunction with measurements of the temperature behavior of lifetime at low excess density, these studies were used to obtain the parameters of recombination centers in n-type germanium irradiated with Co60 gamma rays, and n-type silicon irradiated with 10 -MeV electrons. An experimental study of short-term annealing in bulk silicon indicates that a smaller fraction of the damage is stable in 14-MeV neutron irradiated material than in that irradiated with fission neutrons. (Author)
See also Final Report for 1967, AD-666 220. |
| format | Report |
| fullrecord | <record><control><sourceid>dtic_1RU</sourceid><recordid>TN_cdi_dtic_stinet_AD0685883</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>AD0685883</sourcerecordid><originalsourceid>FETCH-dtic_stinet_AD06858833</originalsourceid><addsrcrecordid>eNrjZNAKcnTxdAzx9PdTcHVzc3UOCVbw9FMI9vTxdAYKOfq5KLi7Bvk6-nmG-vIwsKYl5hSn8kJpbgYZN9cQZw_dlJLM5Pjiksy81JJ4RxcDMwtTCwtjYwLSANFbIZI</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>report</recordtype></control><display><type>report</type><title>RADIATION EFFECTS IN SILICON AND GERMANIUM</title><source>DTIC Technical Reports</source><creator>Curtis,Orlie L , Jr ; Base,Ralph F ; Germano,Carl A ; Srour,Joseph R</creator><creatorcontrib>Curtis,Orlie L , Jr ; Base,Ralph F ; Germano,Carl A ; Srour,Joseph R ; NORTHROP CORPORATE LABS HAWTHORNE CALIF</creatorcontrib><description>The report describes several related studies of radiation effects in silicon and germanium. Theoretical studies have been performed of recombination behavior at disordered regions and of the influence of traps on steady-state lifetime. These studies apply whether the defects are introduced by irradiation or not. The dependence of steady-state lifetime on excess density was used extensively in experimental studies to determine recombination parameters. In conjunction with measurements of the temperature behavior of lifetime at low excess density, these studies were used to obtain the parameters of recombination centers in n-type germanium irradiated with Co60 gamma rays, and n-type silicon irradiated with 10 -MeV electrons. An experimental study of short-term annealing in bulk silicon indicates that a smaller fraction of the damage is stable in 14-MeV neutron irradiated material than in that irradiated with fission neutrons. (Author)
See also Final Report for 1967, AD-666 220.</description><language>eng</language><subject>ANNEALING ; CHARGE CARRIERS ; DAMAGE ; DENSITY ; DOPING ; ELECTRON IRRADIATION ; GAMMA RAYS ; GERMANIUM ; IMPURITIES ; LIFE EXPECTANCY(SERVICE LIFE) ; MOBILITY ; NUCLEAR RADIATION ; PHOTOCONDUCTIVITY ; Radioactiv, Radioactive Wastes & Fission Prod ; SEMICONDUCTORS ; SILICON ; Solid State Physics</subject><creationdate>1968</creationdate><rights>APPROVED FOR PUBLIC RELEASE</rights><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,778,883,27550,27551</link.rule.ids><linktorsrc>$$Uhttps://apps.dtic.mil/sti/citations/AD0685883$$EView_record_in_DTIC$$FView_record_in_$$GDTIC$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Curtis,Orlie L , Jr</creatorcontrib><creatorcontrib>Base,Ralph F</creatorcontrib><creatorcontrib>Germano,Carl A</creatorcontrib><creatorcontrib>Srour,Joseph R</creatorcontrib><creatorcontrib>NORTHROP CORPORATE LABS HAWTHORNE CALIF</creatorcontrib><title>RADIATION EFFECTS IN SILICON AND GERMANIUM</title><description>The report describes several related studies of radiation effects in silicon and germanium. Theoretical studies have been performed of recombination behavior at disordered regions and of the influence of traps on steady-state lifetime. These studies apply whether the defects are introduced by irradiation or not. The dependence of steady-state lifetime on excess density was used extensively in experimental studies to determine recombination parameters. In conjunction with measurements of the temperature behavior of lifetime at low excess density, these studies were used to obtain the parameters of recombination centers in n-type germanium irradiated with Co60 gamma rays, and n-type silicon irradiated with 10 -MeV electrons. An experimental study of short-term annealing in bulk silicon indicates that a smaller fraction of the damage is stable in 14-MeV neutron irradiated material than in that irradiated with fission neutrons. (Author)
See also Final Report for 1967, AD-666 220.</description><subject>ANNEALING</subject><subject>CHARGE CARRIERS</subject><subject>DAMAGE</subject><subject>DENSITY</subject><subject>DOPING</subject><subject>ELECTRON IRRADIATION</subject><subject>GAMMA RAYS</subject><subject>GERMANIUM</subject><subject>IMPURITIES</subject><subject>LIFE EXPECTANCY(SERVICE LIFE)</subject><subject>MOBILITY</subject><subject>NUCLEAR RADIATION</subject><subject>PHOTOCONDUCTIVITY</subject><subject>Radioactiv, Radioactive Wastes & Fission Prod</subject><subject>SEMICONDUCTORS</subject><subject>SILICON</subject><subject>Solid State Physics</subject><fulltext>true</fulltext><rsrctype>report</rsrctype><creationdate>1968</creationdate><recordtype>report</recordtype><sourceid>1RU</sourceid><recordid>eNrjZNAKcnTxdAzx9PdTcHVzc3UOCVbw9FMI9vTxdAYKOfq5KLi7Bvk6-nmG-vIwsKYl5hSn8kJpbgYZN9cQZw_dlJLM5Pjiksy81JJ4RxcDMwtTCwtjYwLSANFbIZI</recordid><startdate>196812</startdate><enddate>196812</enddate><creator>Curtis,Orlie L , Jr</creator><creator>Base,Ralph F</creator><creator>Germano,Carl A</creator><creator>Srour,Joseph R</creator><scope>1RU</scope><scope>BHM</scope></search><sort><creationdate>196812</creationdate><title>RADIATION EFFECTS IN SILICON AND GERMANIUM</title><author>Curtis,Orlie L , Jr ; Base,Ralph F ; Germano,Carl A ; Srour,Joseph R</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-dtic_stinet_AD06858833</frbrgroupid><rsrctype>reports</rsrctype><prefilter>reports</prefilter><language>eng</language><creationdate>1968</creationdate><topic>ANNEALING</topic><topic>CHARGE CARRIERS</topic><topic>DAMAGE</topic><topic>DENSITY</topic><topic>DOPING</topic><topic>ELECTRON IRRADIATION</topic><topic>GAMMA RAYS</topic><topic>GERMANIUM</topic><topic>IMPURITIES</topic><topic>LIFE EXPECTANCY(SERVICE LIFE)</topic><topic>MOBILITY</topic><topic>NUCLEAR RADIATION</topic><topic>PHOTOCONDUCTIVITY</topic><topic>Radioactiv, Radioactive Wastes & Fission Prod</topic><topic>SEMICONDUCTORS</topic><topic>SILICON</topic><topic>Solid State Physics</topic><toplevel>online_resources</toplevel><creatorcontrib>Curtis,Orlie L , Jr</creatorcontrib><creatorcontrib>Base,Ralph F</creatorcontrib><creatorcontrib>Germano,Carl A</creatorcontrib><creatorcontrib>Srour,Joseph R</creatorcontrib><creatorcontrib>NORTHROP CORPORATE LABS HAWTHORNE CALIF</creatorcontrib><collection>DTIC Technical Reports</collection><collection>DTIC STINET</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Curtis,Orlie L , Jr</au><au>Base,Ralph F</au><au>Germano,Carl A</au><au>Srour,Joseph R</au><aucorp>NORTHROP CORPORATE LABS HAWTHORNE CALIF</aucorp><format>book</format><genre>unknown</genre><ristype>RPRT</ristype><btitle>RADIATION EFFECTS IN SILICON AND GERMANIUM</btitle><date>1968-12</date><risdate>1968</risdate><abstract>The report describes several related studies of radiation effects in silicon and germanium. Theoretical studies have been performed of recombination behavior at disordered regions and of the influence of traps on steady-state lifetime. These studies apply whether the defects are introduced by irradiation or not. The dependence of steady-state lifetime on excess density was used extensively in experimental studies to determine recombination parameters. In conjunction with measurements of the temperature behavior of lifetime at low excess density, these studies were used to obtain the parameters of recombination centers in n-type germanium irradiated with Co60 gamma rays, and n-type silicon irradiated with 10 -MeV electrons. An experimental study of short-term annealing in bulk silicon indicates that a smaller fraction of the damage is stable in 14-MeV neutron irradiated material than in that irradiated with fission neutrons. (Author)
See also Final Report for 1967, AD-666 220.</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng |
| recordid | cdi_dtic_stinet_AD0685883 |
| source | DTIC Technical Reports |
| subjects | ANNEALING CHARGE CARRIERS DAMAGE DENSITY DOPING ELECTRON IRRADIATION GAMMA RAYS GERMANIUM IMPURITIES LIFE EXPECTANCY(SERVICE LIFE) MOBILITY NUCLEAR RADIATION PHOTOCONDUCTIVITY Radioactiv, Radioactive Wastes & Fission Prod SEMICONDUCTORS SILICON Solid State Physics |
| title | RADIATION EFFECTS IN SILICON AND GERMANIUM |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-16T10%3A13%3A58IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-dtic_1RU&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=unknown&rft.btitle=RADIATION%20EFFECTS%20IN%20SILICON%20AND%20GERMANIUM&rft.au=Curtis,Orlie%20L%20,%20Jr&rft.aucorp=NORTHROP%20CORPORATE%20LABS%20HAWTHORNE%20CALIF&rft.date=1968-12&rft_id=info:doi/&rft_dat=%3Cdtic_1RU%3EAD0685883%3C/dtic_1RU%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |