ELECTRICAL PROPERTIES OF ELECTRON IRRADIATED GERMANIUM

Measurements of the electrical properties of arsenic -doped germanium irradiated at 300K with electrons and annealed at high temperatures are reported. Bombardments with 1.5 Mev electrons on 1.2 ohm-cm n-type material caused the conductivity to decrease initially to a minimum value after being irrad...

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Bibliographische Detailangaben

Hauptverfasser:	Harmatz,Milton, Hollander,Peter
Format:	Report
Sprache:	eng
Schlagworte:	ANNEALING ARSENIC DAMAGE DOPING ELECTRICAL CONDUCTIVITY ELECTRON IRRADIATION GERMANIUM HALL EFFECT LIFE EXPECTANCY(SERVICE LIFE) RADIATION EFFECTS Radioactiv, Radioactive Wastes & Fission Prod SEMICONDUCTORS Solid State Physics
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