HIGH SPEED POWER AMPLIFIER USING AN ELECTRON SWITCHED P-N JUNCTION

A bare contoured junction does not hold up under a combination of vacuum and temperatures above 90C in the test chamber. Planar junction diodes were made which withstood a combination of vacuum and a temperature of 150C for a period in excess of 1000 hours. Limited results were obtained in making la...

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Bibliographische Detailangaben

1. Verfasser:	AKE,Nelson E
Format:	Report
Sprache:	eng
Schlagworte:	BORON Electrical and Electronic Equipment LEAKAGE(ELECTRICAL) PENETRATION PERFORMANCE(ENGINEERING) POWER AMPLIFIERS PULSE AMPLIFIERS SEMICONDUCTOR DIODES SEMICONDUCTORS SILICON Solid State Physics
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