HIGH SPEED POWER AMPLIFIER USING AN ELECTRON SWITCHED P-N JUNCTION

HIGH SPEED POWER AMPLIFIER USING AN ELECTRON SWITCHED P-N JUNCTION

A bare contoured junction does not hold up under a combination of vacuum and temperatures above 90C in the test chamber. Planar junction diodes were made which withstood a combination of vacuum and a temperature of 150C for a period in excess of 1000 hours. Limited results were obtained in making la...

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Bibliographische Detailangaben
1. Verfasser: AKE,Nelson E
Format: Report
Sprache:eng
Schlagworte:
BORON
Electrical and Electronic Equipment
LEAKAGE(ELECTRICAL)
PENETRATION
PERFORMANCE(ENGINEERING)
POWER AMPLIFIERS
PULSE AMPLIFIERS
SEMICONDUCTOR DIODES
SEMICONDUCTORS
SILICON
Solid State Physics
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Beschreibung
Zusammenfassung:A bare contoured junction does not hold up under a combination of vacuum and temperatures above 90C in the test chamber. Planar junction diodes were made which withstood a combination of vacuum and a temperature of 150C for a period in excess of 1000 hours. Limited results were obtained in making large area diodes either planar or open junction when the penetration of the rectifying junction is greater than 6 microns. The feasibility of selectively etching a dice down to within 2-3 microns of the junction was demonstrated. (Author) See also AD-625 420.