INVESTIGATION OF ULTRA HIGH VACUUM SPUTTERED THIN FILMS

INVESTIGATION OF ULTRA HIGH VACUUM SPUTTERED THIN FILMS

Germanium films were sputtered onto quartz and self-substrates in a low-pressure thermionically supported discharge. Reflection electron diffraction and x-ray examination showed that over comparable temperature ranges the orientation of sputtered geranium on quartz films differed from that of evapor...

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser: Wolsky, S. P
Format: Report
Sprache:eng
Schlagworte:
ELECTRICAL PROPERTIES
ELECTRON DIFFRACTION
EPITAXIAL GROWTH
GERMANIUM
LOW PRESSURE
MATERIAL FORMING
METAL FILMS
SEMICONDUCTORS
SPUTTERING
THIN FILMS
X RAY DIFFRACTION
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Beschreibung
Zusammenfassung:Germanium films were sputtered onto quartz and self-substrates in a low-pressure thermionically supported discharge. Reflection electron diffraction and x-ray examination showed that over comparable temperature ranges the orientation of sputtered geranium on quartz films differed from that of evaporated films. Epitaxy was observed on self-substrates at 150 C. Electrical characteristics of evaporated and sputtered films were strikingly similar despite wide variation in substrate material and temperature and in deposition rates. (Author)