STUDY OF SURFACE STATES IN SEMICONDUCTORS

Surface states on GaAs have been studied by the pulsed field effect experiment. The surfaces under investigation were (111) surfaces, the so called A and B surfaces which are terminated by gallium and arsenic, respectively. With zincdoped P-type GaAs, a surface state was found to on the B surface 0....

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Rupprecht ,G, Gilbert ,J, Bergeman,T H
Format:	Report
Sprache:	eng
Schlagworte:	CONDUCTIVITY ELECTRICAL RESISTANCE ELECTRON CAPTURE ETCHED CRYSTALS OXIDES SILICON SURFACE PROPERTIES TEMPERATURE VOLTAGE ZINC
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