STUDY OF SURFACE STATES IN SEMICONDUCTORS

STUDY OF SURFACE STATES IN SEMICONDUCTORS

Surface states on GaAs have been studied by the pulsed field effect experiment. The surfaces under investigation were (111) surfaces, the so called A and B surfaces which are terminated by gallium and arsenic, respectively. With zincdoped P-type GaAs, a surface state was found to on the B surface 0....

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Bibliographische Detailangaben
Hauptverfasser: Rupprecht ,G, Gilbert ,J, Bergeman,T H
Format: Report
Sprache:eng
Schlagworte:
CONDUCTIVITY
ELECTRICAL RESISTANCE
ELECTRON CAPTURE
ETCHED CRYSTALS
OXIDES
SILICON
SURFACE PROPERTIES
TEMPERATURE
VOLTAGE
ZINC
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Beschreibung
Zusammenfassung:Surface states on GaAs have been studied by the pulsed field effect experiment. The surfaces under investigation were (111) surfaces, the so called A and B surfaces which are terminated by gallium and arsenic, respectively. With zincdoped P-type GaAs, a surface state was found to on the B surface 0.53 eV above the valence band with a capture cross-section for holes of about 3 x 10 -12th power sq, which is indicative of an acceptor state. (Author)