DNA-based doping and fabrication of PN diodes

This paper reports the fabrication of silicon PN diode by using DNA nanostructure as the etching template for SiO 2 and also as the n -dopant of Si. DNA nanotubes were deposited onto p -type silicon wafer that has a thermal SiO 2 layer. The DNA nanotubes catalyze the etching of SiO 2 by HF vapor to expose the underlying Si. The phosphate groups in the DNA nanotube were used as the doping source to locally n -dope the Si wafer to form vertical P-N junctions. Prototype PN diodes were fabricated and exhibited expected blockage behavior with a knee voltage of ca. 0.7 V. Our work highlights the potential of DNA nanotechnology in future fabrication of nanoelectronics.