Quantum effects in electrical transport properties of Bismuth chalcogenides Topological Insulators

Quantum effects in electrical transport properties of Bismuth chalcogenides Topological Insulators

Quantum effects such as weak-antilocalisation (WAL) behavior and Shubnikov-de Haas (SdH) oscillations in the electrical transport properties of topological insulators, measured on nanostructured polycrystalline samples and single-crystals of a series of bismuth chalcogenide compounds (Bi 2 (Se x Te1...

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Veröffentlicht in:EPJ Web of conferences 2020, Vol.233, p.1001
Hauptverfasser: Paixão, José A., Henriques, Marta S.C., Micale, Carlotta, Lopes, Elsa B., Pereira, Vanda M., Gonçalves, António P.
Format: Artikel
Sprache:eng
Schlagworte:
Bismuth
Chalcogenides
Single crystals
Topological insulators
Transport properties
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Zusammenfassung:Quantum effects such as weak-antilocalisation (WAL) behavior and Shubnikov-de Haas (SdH) oscillations in the electrical transport properties of topological insulators, measured on nanostructured polycrystalline samples and single-crystals of a series of bismuth chalcogenide compounds (Bi 2 (Se x Te1- x ) 3 , 0 ≤ x ≤ 1 and BiSbTe 3 ), are presented and discussed.
ISSN:2100-014X
2101-6275
2100-014X
DOI:10.1051/epjconf/202023301001