2D Halide Perovskites for High‐Performance Resistive Switching Memory and Artificial Synapse Applications

Metal halide perovskites (MHPs) are considered as promising candidates in the application of nonvolatile high‐density, low‐cost resistive switching (RS) memories and artificial synapses, resulting from their excellent electronic and optoelectronic properties including large light absorption coefficient, fast ion migration, long carrier diffusion length, low trap density, high defect tolerance. Among MHPs, 2D halide perovskites have exotic layered structure and great environment stability as compared with 3D counterparts. Herein, recent advances of 2D MHPs for the RS memories and artificial synapses realms are comprehensively summarized and discussed, as well as the layered structure properties and the related physical mechanisms are presented. Furthermore, the current issues and developing roadmap for the next‐generation 2D MHPs RS memories and artificial synapse are elucidated. 2D metal halide perovskites are among the most rapidly emerging materials for resistive switching memory and artificial synapses applications. This timely review elucidates the recent progress of 2D metal halide perovskites in achieving high performance and enhanced stability in memory and synapses applications. The challenges and development directions are also discussed.