Polar coupling enabled nonlinear optical filtering at MoS2/ferroelectric heterointerfaces

Complex oxide heterointerfaces and van der Waals heterostructures present two versatile but intrinsically different platforms for exploring emergent quantum phenomena and designing new functionalities. The rich opportunity offered by the synergy between these two classes of materials, however, is ye...

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Veröffentlicht in:Nature communications 2020-03, Vol.11 (1), p.1422-1422, Article 1422
Hauptverfasser: Li, Dawei, Huang, Xi, Xiao, Zhiyong, Chen, Hanying, Zhang, Le, Hao, Yifei, Song, Jingfeng, Shao, Ding-Fu, Tsymbal, Evgeny Y., Lu, Yongfeng, Hong, Xia
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Sprache:eng
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Zusammenfassung:Complex oxide heterointerfaces and van der Waals heterostructures present two versatile but intrinsically different platforms for exploring emergent quantum phenomena and designing new functionalities. The rich opportunity offered by the synergy between these two classes of materials, however, is yet to be charted. Here, we report an unconventional nonlinear optical filtering effect resulting from the interfacial polar alignment between monolayer MoS 2 and a neighboring ferroelectric oxide thin film. The second harmonic generation response at the heterointerface is either substantially enhanced or almost entirely quenched by an underlying ferroelectric domain wall depending on its chirality, and can be further tailored by the polar domains. Unlike the extensively studied coupling mechanisms driven by charge, spin, and lattice, the interfacial tailoring effect is solely mediated by the polar symmetry, as well explained via our density functional theory calculations, pointing to a new material strategy for the functional design of nanoscale reconfigurable optical applications. The heterointerface between complex oxides and van der Waals materials presents a versatile platform for exploring new functionalities. Here, the authors report an unconventional nonlinear optical filtering effect resulting from the interfacial polar alignment between monolayer MoS 2 and a ferroelectric oxide thin film.
ISSN:2041-1723
2041-1723
DOI:10.1038/s41467-020-15191-2