A novel type-II–II heterojunction for photocatalytic degradation of LEV based on the built-in electric field: carrier transfer mechanism and DFT calculation
Heterojunctions play a crucial role in improving the absorption of visible light and performance of photocatalysts for organic contaminants degradation in water. In this work, a novel type-II–II Ag 2 CO 3 /Bi 2 WO 6 (AB) heterojunction was synthesized by hydrothermal reaction and in situ-precipitati...
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Veröffentlicht in: | Scientific reports 2024-05, Vol.14 (1), p.10643-10643, Article 10643 |
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Sprache: | eng |
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Zusammenfassung: | Heterojunctions play a crucial role in improving the absorption of visible light and performance of photocatalysts for organic contaminants degradation in water. In this work, a novel type-II–II Ag
2
CO
3
/Bi
2
WO
6
(AB) heterojunction was synthesized by hydrothermal reaction and in situ-precipitation methods. The mechanisms of charge transfer and carrier separation at the interface of heterojunctions and the influence on the photocatalytic activity were investigated. The degradation of levofloxacin (LEV) under visible light irradiation was employed to evaluate the photocatalytic performance of AB. The results showed that 85.4% LEV was degraded by AB, which was 1.38 and 1.39 times higher than that of Bi
2
WO
6
and Ag
2
CO
3
, respectively. The work functions of the different crystal planes in the AB heterojunction, which was calculated by density functional theory, are a significant difference. The Fermi energy (
E
f
) of Ag
2
CO
3
(− 6.005 eV) is lower than Bi
2
WO
6
(− 3.659 eV), but the conduction band (CB) is higher. Therefore, using AB heterojunctions as an example, the research explored the mechanism of type-II–II which CB and
E
f
of one semiconductor cannot simultaneously surpass those of another material, based on the built-in electric field theory. Through this analysis, a deeper understanding of type-II heterojunctions was achieved, and providing valuable insights into the behavior of this specific heterojunction system. |
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ISSN: | 2045-2322 2045-2322 |
DOI: | 10.1038/s41598-024-60250-z |