Self Assembly of semiconductor nanostructures
In this work we present the growth and characterization of GaAs self-assembled quantum wires (SAQWRs), and InAs self-assembled quantum dots (SAQDs) by molecular beam epitaxy on (631)-oriented GaAs substrates. Adatoms on the (631) crystal plane present a strong surface diffusion anisotropy which we u...
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| Veröffentlicht in: | Respuestas 2007, Vol.12 (2), p.47-51 |
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| container_title | Respuestas |
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| creator | Pulzara Mora, Álvaro Orlando Ramírez López, Manuel López López, Máximo Martínez Velis, Isaac Cruz Hernández, Esteban Rojas Ramírez, Juan Salvador |
| description | In this work we present the growth and characterization of GaAs self-assembled quantum wires (SAQWRs), and InAs self-assembled quantum dots (SAQDs) by molecular beam epitaxy on (631)-oriented GaAs substrates. Adatoms on the (631) crystal plane present a strong surface diffusion anisotropy which we use to induce preferential growth along one direction to produce SAQWRs. On the other hand, InAs SAQDs were obtained on GaAs(631) with SAQWRs by the Stransky–Krastanov (S-K) growth method. SAQDs grown directly on (631) substrates presented considerable fluctuations in size. We study the effects of growing a stressor layer before the SAQDs formation to reduce these fluctuations. |
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| ispartof | Respuestas, 2007, Vol.12 (2), p.47-51 |
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| language | eng |
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| subjects | molecular beam epitaxy quantum dots Quantum wires selfassembly |
| title | Self Assembly of semiconductor nanostructures |
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