Efficient removal of ZEP ebeam resist after dry etching

Efficient removal of ZEP ebeam resist after dry etching

Resist removal is an essential step for multi-layer lithography processes where a clean and contamination-free surface is essential to avoid shadow etching patterns from resist leftovers. We show that a short \$\mathrm{O_2}\$ plasma exposure followed by a full NMP solution cycle removes the resist f...

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Bibliographische Detailangaben
1. Verfasser: Bereyhi, Mohammad J.
Format: Report
Sprache:eng
Schlagworte:
dry etching
electron beam lithography (EBL)
NMP solution
O2 Plasma
Tepla GigaBatch
ZEP
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Beschreibung
Zusammenfassung:Resist removal is an essential step for multi-layer lithography processes where a clean and contamination-free surface is essential to avoid shadow etching patterns from resist leftovers. We show that a short \$\mathrm{O_2}\$ plasma exposure followed by a full NMP solution cycle removes the resist fully and leaves the surface contamination free.
DOI:10.5281/zenodo.5092881