Measurement of mobility and lifetime of electrons and holes in a Schottky CdTe diode

We report on the measurement of drift properties of electrons and holes in a CdTe diode grown by the travelling heating method (THM). Mobility and lifetime of both charge carriers has been measured independently at room temperature and fixed bias voltage using charge integration readout electronics....

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Ariño-Estrada, Gerard, Chmeissani, Mokhtar, De Lorenzo, Gianluca, Kolstein, Machiel, Puigdengoles, Carles, García, J, Cabruja i Casas, Enric
Format:	Artikel
Sprache:	eng
Schlagworte:	Charge transport and multiplication in solid media Detector modelling and simulations II (electric fields, charge transport, multiplication and induction, pulse formation, electron emission, etc) Solid state detectors
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!