Closed-Loop Compensation of Charge Trapping Induced by Ionizing Radiation in MOS Capacitors

The objective of this paper is to explore the capability of a charge trapping control loop to continuously compensate charge induced by ionizing radiation in the dielectric of metal-oxide-semiconductor (MOS) capacitors. To this effect, two devices made with silicon oxide have been simultaneously irr...

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Veröffentlicht in:	IEEE transactions on industrial electronics (1982) 2018-03, Vol.65 (3), p.2518-2524
Hauptverfasser:	Dominguez-Pumar, Manuel, Reddy Bheesayagari, Chenna, Gorreta, Sergi, Lopez-Rodriguez, Gema, Pons-Nin, Joan
Format:	Artikel
Sprache:	eng
Schlagworte:	Capacitance Capacitance-voltage characteristics Capacitors CDielectrics Charge trapping control Dielectrics Electrònica industrial Física Física de l'estat sòlid Gamma rays Industrial electronics Ionizing radiation Metal oxide semiconductors Metall-òxid-semiconductors metal–insulator–semiconductor (MIS) capacitors metal–oxide–semiconductor (MOS) capacitors MIS capacitors Modulation MOS capacitors Radiation effects Semiconductors Sigma-delta modulation Stability Trapping Àrees temàtiques de la UPC
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