Influence of amorphous silicon carbide intermediate layer in the back-contact structure of Cu2ZnSnSe4 solar cells

© 2016 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to s...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Colina Brito, Mónica Alejandra, Martín García, Isidro, Giraldo, Sergio, Sánchez González, Yudania, Kondrotas, Rokas, Oliva, Florian, Izquierdo Roca, Víctor, Pérez Rodríguez, Alejandro, Coll Valentí, Arnau, Alcubilla González, Ramón, Saucedo Silva, Edgardo Ademar
Format:	Artikel
Sprache:	eng
Schlagworte:	Amorphous silicon Cu2ZnSn(S1-ySey) (CZTS) Energia fotovoltaica Energia solar fotovoltaica Energies Generació Microscòpia electrònica d'escombratge Photovoltaic power generation Scanning electron microscopy Silici silicon carbide surface passivation layer thin-film solar cells Àrees temàtiques de la UPC
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!