Nanocrystalline silicon thin films on PEN substrates
We study the structural and electrical properties of intrinsic layer growth close to the transition between amorphous silicon (a-Si:H) and nanocrystalline silicon (nc-Si:H), deposited on glass and PEN without intentional heating. These samples showed different behaviour in Raman shift and XRD spectr...
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| Veröffentlicht in: | Thin solid films 2007-06 |
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| container_title | Thin solid films |
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| creator | Villar, Fernando Escarré i Palou, Jordi Antony, Aldrin Stella, Marco Rojas Tarazona, Fredy E Asensi López, José Miguel Bertomeu i Balagueró, Joan Andreu i Batallé, Jordi |
| description | We study the structural and electrical properties of intrinsic layer growth close to the transition between amorphous silicon (a-Si:H) and nanocrystalline silicon (nc-Si:H), deposited on glass and PEN without intentional heating. These samples showed different behaviour in Raman shift and XRD spectra when compared with that of samples deposited at 200 °C. Electrical properties of these films also reflect the transition between a-Si:H and nc-Si:H, and put in evidence some differences between the microstructure of the films grown on PEN and on glass. P- and n-doped layers were deposited onto glass substrate without intentional heating and at 100 °C with thicknesses ranging from 1000 nm to 35 nm. Conductivity measurements indicate the capability of doping this material, but, for very thin layers, substrate heating was found to be essential. |
| format | Article |
| fullrecord | <record><control><sourceid>csuc</sourceid><recordid>TN_cdi_csuc_recercat_oai_recercat_cat_2072_261315</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>oai_recercat_cat_2072_261315</sourcerecordid><originalsourceid>FETCH-csuc_recercat_oai_recercat_cat_2072_2613153</originalsourceid><addsrcrecordid>eNqdiz0LwjAQQDMoWD_-Q_5A4ZLWirNUnIqDeziPFE9iArl08N-rILg7PB5veDNVAbRQd7CHhVqK3AHAWNtUqh0wJspPKRgCR6-FA1OKutw46pHDQ_S7zv2gZbpKyVi8rNV8xCB-8_VKmWN_OZxqkolc9uQzYXEJ-RcfLOyss51pzLb553kBok4-nw</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Nanocrystalline silicon thin films on PEN substrates</title><source>ScienceDirect Journals (5 years ago - present)</source><source>Recercat</source><creator>Villar, Fernando ; Escarré i Palou, Jordi ; Antony, Aldrin ; Stella, Marco ; Rojas Tarazona, Fredy E ; Asensi López, José Miguel ; Bertomeu i Balagueró, Joan ; Andreu i Batallé, Jordi</creator><creatorcontrib>Villar, Fernando ; Escarré i Palou, Jordi ; Antony, Aldrin ; Stella, Marco ; Rojas Tarazona, Fredy E ; Asensi López, José Miguel ; Bertomeu i Balagueró, Joan ; Andreu i Batallé, Jordi</creatorcontrib><description>We study the structural and electrical properties of intrinsic layer growth close to the transition between amorphous silicon (a-Si:H) and nanocrystalline silicon (nc-Si:H), deposited on glass and PEN without intentional heating. These samples showed different behaviour in Raman shift and XRD spectra when compared with that of samples deposited at 200 °C. Electrical properties of these films also reflect the transition between a-Si:H and nc-Si:H, and put in evidence some differences between the microstructure of the films grown on PEN and on glass. P- and n-doped layers were deposited onto glass substrate without intentional heating and at 100 °C with thicknesses ranging from 1000 nm to 35 nm. Conductivity measurements indicate the capability of doping this material, but, for very thin layers, substrate heating was found to be essential.</description><identifier>ISSN: 0040-6090</identifier><language>eng</language><publisher>Elsevier B.V</publisher><subject>Cèl·lules solars ; Silici ; Silicon ; Solar cells</subject><ispartof>Thin solid films, 2007-06</ispartof><rights>(c) Elsevier B.V., 2007 info:eu-repo/semantics/openAccess</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,777,781,882,26955</link.rule.ids></links><search><creatorcontrib>Villar, Fernando</creatorcontrib><creatorcontrib>Escarré i Palou, Jordi</creatorcontrib><creatorcontrib>Antony, Aldrin</creatorcontrib><creatorcontrib>Stella, Marco</creatorcontrib><creatorcontrib>Rojas Tarazona, Fredy E</creatorcontrib><creatorcontrib>Asensi López, José Miguel</creatorcontrib><creatorcontrib>Bertomeu i Balagueró, Joan</creatorcontrib><creatorcontrib>Andreu i Batallé, Jordi</creatorcontrib><title>Nanocrystalline silicon thin films on PEN substrates</title><title>Thin solid films</title><description>We study the structural and electrical properties of intrinsic layer growth close to the transition between amorphous silicon (a-Si:H) and nanocrystalline silicon (nc-Si:H), deposited on glass and PEN without intentional heating. These samples showed different behaviour in Raman shift and XRD spectra when compared with that of samples deposited at 200 °C. Electrical properties of these films also reflect the transition between a-Si:H and nc-Si:H, and put in evidence some differences between the microstructure of the films grown on PEN and on glass. P- and n-doped layers were deposited onto glass substrate without intentional heating and at 100 °C with thicknesses ranging from 1000 nm to 35 nm. Conductivity measurements indicate the capability of doping this material, but, for very thin layers, substrate heating was found to be essential.</description><subject>Cèl·lules solars</subject><subject>Silici</subject><subject>Silicon</subject><subject>Solar cells</subject><issn>0040-6090</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2007</creationdate><recordtype>article</recordtype><sourceid>XX2</sourceid><recordid>eNqdiz0LwjAQQDMoWD_-Q_5A4ZLWirNUnIqDeziPFE9iArl08N-rILg7PB5veDNVAbRQd7CHhVqK3AHAWNtUqh0wJspPKRgCR6-FA1OKutw46pHDQ_S7zv2gZbpKyVi8rNV8xCB-8_VKmWN_OZxqkolc9uQzYXEJ-RcfLOyss51pzLb553kBok4-nw</recordid><startdate>20070611</startdate><enddate>20070611</enddate><creator>Villar, Fernando</creator><creator>Escarré i Palou, Jordi</creator><creator>Antony, Aldrin</creator><creator>Stella, Marco</creator><creator>Rojas Tarazona, Fredy E</creator><creator>Asensi López, José Miguel</creator><creator>Bertomeu i Balagueró, Joan</creator><creator>Andreu i Batallé, Jordi</creator><general>Elsevier B.V</general><scope>XX2</scope></search><sort><creationdate>20070611</creationdate><title>Nanocrystalline silicon thin films on PEN substrates</title><author>Villar, Fernando ; Escarré i Palou, Jordi ; Antony, Aldrin ; Stella, Marco ; Rojas Tarazona, Fredy E ; Asensi López, José Miguel ; Bertomeu i Balagueró, Joan ; Andreu i Batallé, Jordi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-csuc_recercat_oai_recercat_cat_2072_2613153</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2007</creationdate><topic>Cèl·lules solars</topic><topic>Silici</topic><topic>Silicon</topic><topic>Solar cells</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Villar, Fernando</creatorcontrib><creatorcontrib>Escarré i Palou, Jordi</creatorcontrib><creatorcontrib>Antony, Aldrin</creatorcontrib><creatorcontrib>Stella, Marco</creatorcontrib><creatorcontrib>Rojas Tarazona, Fredy E</creatorcontrib><creatorcontrib>Asensi López, José Miguel</creatorcontrib><creatorcontrib>Bertomeu i Balagueró, Joan</creatorcontrib><creatorcontrib>Andreu i Batallé, Jordi</creatorcontrib><collection>Recercat</collection><jtitle>Thin solid films</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Villar, Fernando</au><au>Escarré i Palou, Jordi</au><au>Antony, Aldrin</au><au>Stella, Marco</au><au>Rojas Tarazona, Fredy E</au><au>Asensi López, José Miguel</au><au>Bertomeu i Balagueró, Joan</au><au>Andreu i Batallé, Jordi</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Nanocrystalline silicon thin films on PEN substrates</atitle><jtitle>Thin solid films</jtitle><date>2007-06-11</date><risdate>2007</risdate><issn>0040-6090</issn><abstract>We study the structural and electrical properties of intrinsic layer growth close to the transition between amorphous silicon (a-Si:H) and nanocrystalline silicon (nc-Si:H), deposited on glass and PEN without intentional heating. These samples showed different behaviour in Raman shift and XRD spectra when compared with that of samples deposited at 200 °C. Electrical properties of these films also reflect the transition between a-Si:H and nc-Si:H, and put in evidence some differences between the microstructure of the films grown on PEN and on glass. P- and n-doped layers were deposited onto glass substrate without intentional heating and at 100 °C with thicknesses ranging from 1000 nm to 35 nm. Conductivity measurements indicate the capability of doping this material, but, for very thin layers, substrate heating was found to be essential.</abstract><pub>Elsevier B.V</pub><tpages>12</tpages><oa>free_for_read</oa></addata></record> |
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| identifier | ISSN: 0040-6090 |
| ispartof | Thin solid films, 2007-06 |
| issn | 0040-6090 |
| language | eng |
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| source | ScienceDirect Journals (5 years ago - present); Recercat |
| subjects | Cèl·lules solars Silici Silicon Solar cells |
| title | Nanocrystalline silicon thin films on PEN substrates |
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