An Accurate and Verilog-A Compatible Compact Model for Graphene Field-Effect Transistors

The present paper provides an accurate drift-diffusion model of the graphene field-effect transistor (GFET). A precise yet mathematically simple current-voltage relation is derived by focusing on device physics at energy levels close to the Dirac point. With respect to previous work, our approach ex...

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Veröffentlicht in:	IEEE transactions on nanotechnology 2014-09, Vol.13 (5), p.895-904
Hauptverfasser:	Landauer, Gerhard Martin, Jimenez, David, Gonzalez, Jose Luis
Format:	Artikel
Sprache:	eng
Schlagworte:	Accuracy circuit simulators Circuits electrònics Compatibility current saturation current-voltage relation Devices Dirac point drain current drift-diffusion model Electric potential energy levels Enginyeria electrònica Field effect transistors GFET-based integrated circuit design Graphene graphene field-effect transistor Integrated circuit modeling intrinsic gain Logic gates low-voltage biasing regime Mathematical model Mathematical models Nanotechnology Nanotecnologia output conductance Quantum capacitance Semiconductor devices transconductance Verilog-A compatible compact model Àrees temàtiques de la UPC
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