Resistance switching in transparent magnetic MgO films

We have studied the abrupt and hysteretic changes of resistance in MgO-based capacitor devices. The switching behavior is discussed in terms of the formation and rupture of conduction filaments due to the migration of structural defects in the electric field, together with the redox events which aff...

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Veröffentlicht in:	Solid state communications 2011-12, Vol.151 (24), p.1856-1859
Hauptverfasser:	Jambois, O., Carreras, P., Antony, A., Bertomeu, J., Martínez-Boubeta, C.
Format:	Artikel
Sprache:	eng
Schlagworte:	A. Thin films C. Point defects Condensed matter Condensed matter: electronic structure, electrical, magnetic, and optical properties D. Electronic transport Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport phenomena in thin films and low-dimensional structures Espintrònica Exact sciences and technology Ferromagnetism Ferromagnetisme Low-field transport and mobility piezoresistance Magnesium oxide Matèria condensada Pel·lícules fines Physics Spintronics Thin films Òxid de magnesi
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