Thin film transistors obtained by hot wire CVD
Hydrogenated microcrystalline silicon films obtained at low temperature (150–280°C) by hot wire chemical vapour deposition at two different process pressures were measured by Raman spectroscopy, X-ray diffraction (XRD) spectroscopy and photothermal deflection spectroscopy (PDS). A crystalline fracti...
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| Veröffentlicht in: | Journal of non-crystalline solids 2000-05, Vol.266, p.1304-1309 |
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| container_end_page | 1309 |
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| container_title | Journal of non-crystalline solids |
| container_volume | 266 |
| creator | Puigdollers, J Orpella, A Dosev, D Voz, C Peiró, D Pallarés, J Marsal, L.F Bertomeu, J Andreu, J Alcubilla, R |
| description | Hydrogenated microcrystalline silicon films obtained at low temperature (150–280°C) by hot wire chemical vapour deposition at two different process pressures were measured by Raman spectroscopy, X-ray diffraction (XRD) spectroscopy and photothermal deflection spectroscopy (PDS). A crystalline fraction >90% with a subgap optical absortion 10 cm
−1 at 0.8 eV were obtained in films deposited at growth rates >0.8 nm/s. These films were incorporated in n-channel thin film transistors and their electrical properties were measured. The saturation mobility was 0.72
±
0.05 cm
2/V s and the threshold voltage around 0.2 eV. The dependence of their conductance activation energies on gate voltages were related to the properties of the material. |
| doi_str_mv | 10.1016/S0022-3093(99)00942-4 |
| format | Article |
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−1 at 0.8 eV were obtained in films deposited at growth rates >0.8 nm/s. These films were incorporated in n-channel thin film transistors and their electrical properties were measured. The saturation mobility was 0.72
±
0.05 cm
2/V s and the threshold voltage around 0.2 eV. The dependence of their conductance activation energies on gate voltages were related to the properties of the material.</description><identifier>ISSN: 0022-3093</identifier><identifier>EISSN: 1873-4812</identifier><identifier>DOI: 10.1016/S0022-3093(99)00942-4</identifier><language>eng</language><publisher>Elsevier B.V</publisher><subject>Amorphous semiconductors ; Chemical vapor deposition ; Deposició química en fase vapor ; Low temperatures ; Pel·lícules fines ; Semiconductors amorfs ; Silici ; Silicon ; Temperatures baixes ; Thin films ; Transistors</subject><ispartof>Journal of non-crystalline solids, 2000-05, Vol.266, p.1304-1309</ispartof><rights>2000 Elsevier Science B.V.</rights><rights>(c) Elsevier B.V., 2000 info:eu-repo/semantics/openAccess</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c396t-60e6c8857e3259cb605dc18c77b9b37e5763c423f4b3ea8605b6776f2d339c8c3</citedby><cites>FETCH-LOGICAL-c396t-60e6c8857e3259cb605dc18c77b9b37e5763c423f4b3ea8605b6776f2d339c8c3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/S0022-3093(99)00942-4$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>230,314,776,780,881,3536,26953,27903,27904,45974</link.rule.ids></links><search><creatorcontrib>Puigdollers, J</creatorcontrib><creatorcontrib>Orpella, A</creatorcontrib><creatorcontrib>Dosev, D</creatorcontrib><creatorcontrib>Voz, C</creatorcontrib><creatorcontrib>Peiró, D</creatorcontrib><creatorcontrib>Pallarés, J</creatorcontrib><creatorcontrib>Marsal, L.F</creatorcontrib><creatorcontrib>Bertomeu, J</creatorcontrib><creatorcontrib>Andreu, J</creatorcontrib><creatorcontrib>Alcubilla, R</creatorcontrib><title>Thin film transistors obtained by hot wire CVD</title><title>Journal of non-crystalline solids</title><description>Hydrogenated microcrystalline silicon films obtained at low temperature (150–280°C) by hot wire chemical vapour deposition at two different process pressures were measured by Raman spectroscopy, X-ray diffraction (XRD) spectroscopy and photothermal deflection spectroscopy (PDS). A crystalline fraction >90% with a subgap optical absortion 10 cm
−1 at 0.8 eV were obtained in films deposited at growth rates >0.8 nm/s. These films were incorporated in n-channel thin film transistors and their electrical properties were measured. The saturation mobility was 0.72
±
0.05 cm
2/V s and the threshold voltage around 0.2 eV. The dependence of their conductance activation energies on gate voltages were related to the properties of the material.</description><subject>Amorphous semiconductors</subject><subject>Chemical vapor deposition</subject><subject>Deposició química en fase vapor</subject><subject>Low temperatures</subject><subject>Pel·lícules fines</subject><subject>Semiconductors amorfs</subject><subject>Silici</subject><subject>Silicon</subject><subject>Temperatures baixes</subject><subject>Thin films</subject><subject>Transistors</subject><issn>0022-3093</issn><issn>1873-4812</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2000</creationdate><recordtype>article</recordtype><sourceid>XX2</sourceid><recordid>eNqFkElLA0EQhRtRMEZ_gtBHPUzsZaaXk0hcIeDB6LWZrqkhLcmMdLdK_r2TBT1aUBRF1ffgPULOOZtwxtXVC2NCFJJZeWHtJWO2FEV5QEbcaFmUhotDMvp9OSYnKb2zobQ0IzKZL0JH27Bc0RzrLoWU-5ho73MdOmyoX9NFn-l3iEinb7en5KitlwnP9nNMXu_v5tPHYvb88DS9mRUgrcqFYqjAmEqjFJUFr1jVADegtbdeaqy0klAK2ZZeYm2Gs1daq1Y0UlowIMeE73QhfYKLCBihzq6vw9-yacG0cILbiuuBqfZM7FOK2LqPGFZ1XDvO3CYotw3KbVJw1rptUK4cuOsdh4Ohr4DRJQjYATaDaciu6cM_Cj9Cc23M</recordid><startdate>20000501</startdate><enddate>20000501</enddate><creator>Puigdollers, J</creator><creator>Orpella, A</creator><creator>Dosev, D</creator><creator>Voz, C</creator><creator>Peiró, D</creator><creator>Pallarés, J</creator><creator>Marsal, L.F</creator><creator>Bertomeu, J</creator><creator>Andreu, J</creator><creator>Alcubilla, R</creator><general>Elsevier B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>XX2</scope></search><sort><creationdate>20000501</creationdate><title>Thin film transistors obtained by hot wire CVD</title><author>Puigdollers, J ; Orpella, A ; Dosev, D ; Voz, C ; Peiró, D ; Pallarés, J ; Marsal, L.F ; Bertomeu, J ; Andreu, J ; Alcubilla, R</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c396t-60e6c8857e3259cb605dc18c77b9b37e5763c423f4b3ea8605b6776f2d339c8c3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2000</creationdate><topic>Amorphous semiconductors</topic><topic>Chemical vapor deposition</topic><topic>Deposició química en fase vapor</topic><topic>Low temperatures</topic><topic>Pel·lícules fines</topic><topic>Semiconductors amorfs</topic><topic>Silici</topic><topic>Silicon</topic><topic>Temperatures baixes</topic><topic>Thin films</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Puigdollers, J</creatorcontrib><creatorcontrib>Orpella, A</creatorcontrib><creatorcontrib>Dosev, D</creatorcontrib><creatorcontrib>Voz, C</creatorcontrib><creatorcontrib>Peiró, D</creatorcontrib><creatorcontrib>Pallarés, J</creatorcontrib><creatorcontrib>Marsal, L.F</creatorcontrib><creatorcontrib>Bertomeu, J</creatorcontrib><creatorcontrib>Andreu, J</creatorcontrib><creatorcontrib>Alcubilla, R</creatorcontrib><collection>CrossRef</collection><collection>Recercat</collection><jtitle>Journal of non-crystalline solids</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Puigdollers, J</au><au>Orpella, A</au><au>Dosev, D</au><au>Voz, C</au><au>Peiró, D</au><au>Pallarés, J</au><au>Marsal, L.F</au><au>Bertomeu, J</au><au>Andreu, J</au><au>Alcubilla, R</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Thin film transistors obtained by hot wire CVD</atitle><jtitle>Journal of non-crystalline solids</jtitle><date>2000-05-01</date><risdate>2000</risdate><volume>266</volume><spage>1304</spage><epage>1309</epage><pages>1304-1309</pages><issn>0022-3093</issn><eissn>1873-4812</eissn><abstract>Hydrogenated microcrystalline silicon films obtained at low temperature (150–280°C) by hot wire chemical vapour deposition at two different process pressures were measured by Raman spectroscopy, X-ray diffraction (XRD) spectroscopy and photothermal deflection spectroscopy (PDS). A crystalline fraction >90% with a subgap optical absortion 10 cm
−1 at 0.8 eV were obtained in films deposited at growth rates >0.8 nm/s. These films were incorporated in n-channel thin film transistors and their electrical properties were measured. The saturation mobility was 0.72
±
0.05 cm
2/V s and the threshold voltage around 0.2 eV. The dependence of their conductance activation energies on gate voltages were related to the properties of the material.</abstract><pub>Elsevier B.V</pub><doi>10.1016/S0022-3093(99)00942-4</doi><tpages>6</tpages><oa>free_for_read</oa></addata></record> |
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| ispartof | Journal of non-crystalline solids, 2000-05, Vol.266, p.1304-1309 |
| issn | 0022-3093 1873-4812 |
| language | eng |
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| source | Elsevier ScienceDirect Journals; Recercat |
| subjects | Amorphous semiconductors Chemical vapor deposition Deposició química en fase vapor Low temperatures Pel·lícules fines Semiconductors amorfs Silici Silicon Temperatures baixes Thin films Transistors |
| title | Thin film transistors obtained by hot wire CVD |
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