Progress in a-Si:H/c-Si heterojunction emitters obtained by Hot-Wire CVD at 200 °C

In this work, we investigate heterojunction emitters deposited by Hot-Wire CVD on p-type crystalline silicon. The emitter structure consists of an n-doped film (20 nm) combined with a thin intrinsic hydrogenated amorphous silicon buffer layer (5 nm). The microstructure of these films has been studie...

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Veröffentlicht in:	Thin solid films 2008, Vol.516 (5), p.761-764
Hauptverfasser:	Muñoz, D., Voz, C., Martin, I., Orpella, A., Puigdollers, J., Alcubilla, R., Villar, F., Bertomeu, J., Andreu, J., Damon-Lacoste, J., Roca i Cabarrocas, P.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Chemical vapor deposition Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science rheology Cèl·lules solars Deposició química en fase vapor Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport phenomena in thin films and low-dimensional structures Electronics Energy Exact sciences and technology Heterostructure Hot-wire deposition Materials science Methods of deposition of films and coatings film growth and epitaxy Microelectronic fabrication (materials and surfaces technology) Microelectronics Microelectrònica Natural energy Photoconduction and photovoltaic effects photodielectric effects Photovoltaic conversion Physics Quantum theory Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Solar cell Solar cells Solar cells. Photoelectrochemical cells Solar energy Teoria quàntica
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