Temperature Dependence of Non-Linear Characteristics in Semiconductor Pressure Sensors

This paper discusses the temperature dependence of the nonlinearity in silicon diaphragm piezoresistive pressure sensors. Minimization of the temperature dependence is very important in designing high-precision pressure sensors which can be used over the wide temperature range. The amount of tempera...

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Veröffentlicht in:	Keisoku Jidō Seigyo Gakkai ronbunshū 1985/08/30, Vol.21(8), pp.813-820
Hauptverfasser:	NISHIHARA, Motohisa, SHIMADA, Satoshi, TANABE, Masanori, YAMADA, Kazuji, MATSUOKA, Yoshitaka
Format:	Artikel
Sprache:	eng
Schlagworte:	gauge pattern nonlineality piezoresistive effect semiconductor pressure sensor silicon diaphragm
Online-Zugang:	Volltext
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