Separation of effects of InGaN/GaN superlattice on performance of light-emitting diodes using mid-temperature-grown GaN layer

We evaluated the electrical properties of InGaN-based light-emitting diodes (LEDs) with a superlattice (SL) layer or a mid-temperature-grown GaN (MT-GaN) layer just beneath the multiple quantum wells (MQWs). Both the SL layer and the MT-GaN layer were effective in improving the electroluminescence (...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2018-06, Vol.57 (6), p.62101
Hauptverfasser:	Sugimoto, Kohei, Okada, Narihito, Kurai, Satoshi, Yamada, Yoichi, Tadatomo, Kazuyuki
Format:	Artikel
Sprache:	eng
Schlagworte:	Electrical properties Electroluminescence Gallium nitrides Indium gallium nitrides Light emitting diodes Organic light emitting diodes Pits Quantum wells Superlattices
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