Separation of effects of InGaN/GaN superlattice on performance of light-emitting diodes using mid-temperature-grown GaN layer
We evaluated the electrical properties of InGaN-based light-emitting diodes (LEDs) with a superlattice (SL) layer or a mid-temperature-grown GaN (MT-GaN) layer just beneath the multiple quantum wells (MQWs). Both the SL layer and the MT-GaN layer were effective in improving the electroluminescence (...
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| Veröffentlicht in: | Japanese Journal of Applied Physics 2018-06, Vol.57 (6), p.62101 |
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| container_issue | 6 |
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| container_title | Japanese Journal of Applied Physics |
| container_volume | 57 |
| creator | Sugimoto, Kohei Okada, Narihito Kurai, Satoshi Yamada, Yoichi Tadatomo, Kazuyuki |
| description | We evaluated the electrical properties of InGaN-based light-emitting diodes (LEDs) with a superlattice (SL) layer or a mid-temperature-grown GaN (MT-GaN) layer just beneath the multiple quantum wells (MQWs). Both the SL layer and the MT-GaN layer were effective in improving the electroluminescence (EL) intensity. However, the SL layer had a more pronounced effect on the EL intensity than did the MT-GaN layer. Based on a comparison with devices with an MT-GaN layer, the overall effects of the SL could be separated into the effect of the V-pits and the structural or compositional effect of the SL. It was observed that the V-pits formed account for 30% of the improvement in the LED performance while the remaining 70% can be attributed to the structural or compositional effect of the SL. |
| doi_str_mv | 10.7567/JJAP.57.062101 |
| format | Article |
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Both the SL layer and the MT-GaN layer were effective in improving the electroluminescence (EL) intensity. However, the SL layer had a more pronounced effect on the EL intensity than did the MT-GaN layer. Based on a comparison with devices with an MT-GaN layer, the overall effects of the SL could be separated into the effect of the V-pits and the structural or compositional effect of the SL. 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J. Appl. Phys</addtitle><description>We evaluated the electrical properties of InGaN-based light-emitting diodes (LEDs) with a superlattice (SL) layer or a mid-temperature-grown GaN (MT-GaN) layer just beneath the multiple quantum wells (MQWs). Both the SL layer and the MT-GaN layer were effective in improving the electroluminescence (EL) intensity. However, the SL layer had a more pronounced effect on the EL intensity than did the MT-GaN layer. Based on a comparison with devices with an MT-GaN layer, the overall effects of the SL could be separated into the effect of the V-pits and the structural or compositional effect of the SL. It was observed that the V-pits formed account for 30% of the improvement in the LED performance while the remaining 70% can be attributed to the structural or compositional effect of the SL.</description><subject>Electrical properties</subject><subject>Electroluminescence</subject><subject>Gallium nitrides</subject><subject>Indium gallium nitrides</subject><subject>Light emitting diodes</subject><subject>Organic light emitting diodes</subject><subject>Pits</subject><subject>Quantum wells</subject><subject>Superlattices</subject><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><recordid>eNp1kMFLwzAUxoMoOKdXzwUvIrRLsjRpj2Po3BgqqOeQpslsWZuapMgO_u-mdOBFD4_3Pvh934MPgGsEE5ZSNttsFi9JyhJIMYLoBEzQnLCYQJqeggmEGMUkx_gcXDhXB0lTgibg-1V1wgpfmTYyOlJaK-ndcK7blXiahYlc3ym7F95XUkWBC0ob24h2kDraV7sPH6umCkC7i8rKlMpFvRtEU5WxV01wCN9bFe-s-WqjIXQvDspegjMt9k5dHfcUvD_cvy0f4-3zar1cbGNJIPIx1ThjBUlJpopCoyKDZVZIDZHKRakhpQXMEcNM41SKHEEyz0qFcgIlzUUhs_kU3Iy5nTWfvXKe16a3bXjJMaIMopQRFKhkpKQ1zlmleWerRtgDR5APFfOhYp4yPlYcDLejoTLdb2Jdi26A6BHjXakDevcH-k_uD8WeiqI</recordid><startdate>20180601</startdate><enddate>20180601</enddate><creator>Sugimoto, Kohei</creator><creator>Okada, Narihito</creator><creator>Kurai, Satoshi</creator><creator>Yamada, Yoichi</creator><creator>Tadatomo, Kazuyuki</creator><general>The Japan Society of Applied Physics</general><general>Japanese Journal of Applied Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20180601</creationdate><title>Separation of effects of InGaN/GaN superlattice on performance of light-emitting diodes using mid-temperature-grown GaN layer</title><author>Sugimoto, Kohei ; Okada, Narihito ; Kurai, Satoshi ; Yamada, Yoichi ; Tadatomo, Kazuyuki</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c401t-6f287b4548ebbf1b80d8bcf01e9adf066b091727f25ca910438de1940c69abc83</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2018</creationdate><topic>Electrical properties</topic><topic>Electroluminescence</topic><topic>Gallium nitrides</topic><topic>Indium gallium nitrides</topic><topic>Light emitting diodes</topic><topic>Organic light emitting diodes</topic><topic>Pits</topic><topic>Quantum wells</topic><topic>Superlattices</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Sugimoto, Kohei</creatorcontrib><creatorcontrib>Okada, Narihito</creatorcontrib><creatorcontrib>Kurai, Satoshi</creatorcontrib><creatorcontrib>Yamada, Yoichi</creatorcontrib><creatorcontrib>Tadatomo, Kazuyuki</creatorcontrib><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Sugimoto, Kohei</au><au>Okada, Narihito</au><au>Kurai, Satoshi</au><au>Yamada, Yoichi</au><au>Tadatomo, Kazuyuki</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Separation of effects of InGaN/GaN superlattice on performance of light-emitting diodes using mid-temperature-grown GaN layer</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><addtitle>Jpn. J. Appl. Phys</addtitle><date>2018-06-01</date><risdate>2018</risdate><volume>57</volume><issue>6</issue><spage>62101</spage><pages>62101-</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><coden>JJAPB6</coden><abstract>We evaluated the electrical properties of InGaN-based light-emitting diodes (LEDs) with a superlattice (SL) layer or a mid-temperature-grown GaN (MT-GaN) layer just beneath the multiple quantum wells (MQWs). Both the SL layer and the MT-GaN layer were effective in improving the electroluminescence (EL) intensity. However, the SL layer had a more pronounced effect on the EL intensity than did the MT-GaN layer. Based on a comparison with devices with an MT-GaN layer, the overall effects of the SL could be separated into the effect of the V-pits and the structural or compositional effect of the SL. It was observed that the V-pits formed account for 30% of the improvement in the LED performance while the remaining 70% can be attributed to the structural or compositional effect of the SL.</abstract><cop>Tokyo</cop><pub>The Japan Society of Applied Physics</pub><doi>10.7567/JJAP.57.062101</doi><tpages>5</tpages></addata></record> |
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| ispartof | Japanese Journal of Applied Physics, 2018-06, Vol.57 (6), p.62101 |
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| language | eng |
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| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| subjects | Electrical properties Electroluminescence Gallium nitrides Indium gallium nitrides Light emitting diodes Organic light emitting diodes Pits Quantum wells Superlattices |
| title | Separation of effects of InGaN/GaN superlattice on performance of light-emitting diodes using mid-temperature-grown GaN layer |
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