Impact of crystal orientation on ohmic contact resistance of enhancement-mode p-GaN gate high electron mobility transistors on 200 mm silicon substrates

p-GaN gate enhancement mode power transistors were processed in a Si CMOS processing line on 200 mm Si(111) substrates using Au-free metallization schemes. Si/Ti/Al/Ti/TiN ohmic contacts were formed after full recessing of the AlGaN barrier, followed by a HCl-based wet cleaning step. The electrical...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2018-04, Vol.57 (4S), p.4
Hauptverfasser:	Van Hove, Marleen, Posthuma, Niels, Geens, Karen, Wellekens, Dirk, Li, Xiangdong, Decoutere, Stefaan
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum gallium nitrides Ammonia Cleaning CMOS Contact resistance Crystal structure Electric contacts High electron mobility transistors Metallizing Power semiconductor devices Semiconductor devices Silicon substrates Titanium Transistors
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