Angled etching of Si by ClF 3 –Ar gas cluster injection

Angled etching of Si by ClF 3 –Ar gas cluster injection

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Veröffentlicht in:Japanese Journal of Applied Physics 2017-06, Vol.56 (6S2), p.6
Hauptverfasser: Seki, Toshio, Yamamoto, Hiroki, Kozawa, Takahiro, Shojo, Tadashi, Koike, Kunihiko, Aoki, Takaaki, Matsuo, Jiro
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container_issue 6S2
container_start_page 6
container_title Japanese Journal of Applied Physics
container_volume 56
creator Seki, Toshio
Yamamoto, Hiroki
Kozawa, Takahiro
Shojo, Tadashi
Koike, Kunihiko
Aoki, Takaaki
Matsuo, Jiro
description
doi_str_mv 10.7567/JJAP.56.06HB02
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1347-4065
language eng
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source IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link
title Angled etching of Si by ClF 3 –Ar gas cluster injection
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