X-ray evaluation of high-verticality sidewalls fabricated by deep reactive ion etching
We report the fabrication and characterization of high-verticality sidewalls by deep reactive ion etching (DRIE). We quantitatively evaluated the verticality of the sidewalls with a width of 20 µm and a depth of 300 µm by using an X-ray beam (1.49 keV). To the best of our knowledge, we succeeded in...
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| Veröffentlicht in: | Japanese Journal of Applied Physics 2017-06, Vol.56 (6S1), p.6 |
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| container_issue | 6S1 |
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| container_title | Japanese Journal of Applied Physics |
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| creator | Takeuchi, Kazuma Ezoe, Yuichiro Ishikawa, Kumi Nakamura, Kasumi Numazawa, Masaki Terada, Masaru Fujitani, Maiko Ishi, Daiki Noda, Yusuke Ohashi, Takaya Morishita, Kohei Nakajima, Kazuo Mitsuda, Kazuhisa |
| description | We report the fabrication and characterization of high-verticality sidewalls by deep reactive ion etching (DRIE). We quantitatively evaluated the verticality of the sidewalls with a width of 20 µm and a depth of 300 µm by using an X-ray beam (1.49 keV). To the best of our knowledge, we succeeded in constraining the verticality and smoothness of the DRIE-fabricated sidewalls with the highest accuracy. The verticality of the sidewalls against the wafer surface was estimated from the shifts of the X-ray focus to be 8.7 ± 3.2 arcmin on average within the wafer, while the resolution of the X-ray focus was 21.1 ± 2.7 arcmin in half-power diameter. Although the verticality and resolution require further improvements, we verified that the X-ray imaging technique is valid for quantifying the sidewall properties. |
| doi_str_mv | 10.7567/JJAP.56.06GN04 |
| format | Article |
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We quantitatively evaluated the verticality of the sidewalls with a width of 20 µm and a depth of 300 µm by using an X-ray beam (1.49 keV). To the best of our knowledge, we succeeded in constraining the verticality and smoothness of the DRIE-fabricated sidewalls with the highest accuracy. The verticality of the sidewalls against the wafer surface was estimated from the shifts of the X-ray focus to be 8.7 ± 3.2 arcmin on average within the wafer, while the resolution of the X-ray focus was 21.1 ± 2.7 arcmin in half-power diameter. Although the verticality and resolution require further improvements, we verified that the X-ray imaging technique is valid for quantifying the sidewall properties.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.7567/JJAP.56.06GN04</identifier><identifier>CODEN: JJAPB6</identifier><language>eng</language><publisher>Tokyo: The Japan Society of Applied Physics</publisher><subject>Ion etching ; Reactive ion etching ; Smoothness ; Verticality</subject><ispartof>Japanese Journal of Applied Physics, 2017-06, Vol.56 (6S1), p.6</ispartof><rights>2017 The Japan Society of Applied Physics</rights><rights>Copyright Japanese Journal of Applied Physics Jun 2017</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c447t-82dd806a136acc6f67ce474813679badff9a7b4df4b0f18245c13c780e9cf9653</citedby><cites>FETCH-LOGICAL-c447t-82dd806a136acc6f67ce474813679badff9a7b4df4b0f18245c13c780e9cf9653</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://iopscience.iop.org/article/10.7567/JJAP.56.06GN04/pdf$$EPDF$$P50$$Giop$$H</linktopdf><link.rule.ids>314,776,780,27901,27902,53821,53868</link.rule.ids></links><search><creatorcontrib>Takeuchi, Kazuma</creatorcontrib><creatorcontrib>Ezoe, Yuichiro</creatorcontrib><creatorcontrib>Ishikawa, Kumi</creatorcontrib><creatorcontrib>Nakamura, Kasumi</creatorcontrib><creatorcontrib>Numazawa, Masaki</creatorcontrib><creatorcontrib>Terada, Masaru</creatorcontrib><creatorcontrib>Fujitani, Maiko</creatorcontrib><creatorcontrib>Ishi, Daiki</creatorcontrib><creatorcontrib>Noda, Yusuke</creatorcontrib><creatorcontrib>Ohashi, Takaya</creatorcontrib><creatorcontrib>Morishita, Kohei</creatorcontrib><creatorcontrib>Nakajima, Kazuo</creatorcontrib><creatorcontrib>Mitsuda, Kazuhisa</creatorcontrib><title>X-ray evaluation of high-verticality sidewalls fabricated by deep reactive ion etching</title><title>Japanese Journal of Applied Physics</title><addtitle>Jpn. J. Appl. Phys</addtitle><description>We report the fabrication and characterization of high-verticality sidewalls by deep reactive ion etching (DRIE). We quantitatively evaluated the verticality of the sidewalls with a width of 20 µm and a depth of 300 µm by using an X-ray beam (1.49 keV). To the best of our knowledge, we succeeded in constraining the verticality and smoothness of the DRIE-fabricated sidewalls with the highest accuracy. The verticality of the sidewalls against the wafer surface was estimated from the shifts of the X-ray focus to be 8.7 ± 3.2 arcmin on average within the wafer, while the resolution of the X-ray focus was 21.1 ± 2.7 arcmin in half-power diameter. Although the verticality and resolution require further improvements, we verified that the X-ray imaging technique is valid for quantifying the sidewall properties.</description><subject>Ion etching</subject><subject>Reactive ion etching</subject><subject>Smoothness</subject><subject>Verticality</subject><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><recordid>eNp1kM9LwzAcxYMoOKdXzwFvQmvS5kd7HEOnY6jgD7yFNE22lLrWJJv0v7elA087fXlfPu89eABcYxRzyvjdcjl7jSmLEVs8I3ICJjglPCKI0VMwQSjBEcmT5BxceF_1klGCJ-DzK3Kyg3ov650MttnCxsCNXW-ivXbBKlnb0EFvS_0r69pDIwvXf4MuYdHBUusWOi1VsHsNB7cOamO360twZmTt9dXhTsHHw_37_DFavSye5rNVpAjhIcqSsswQkzhlUilmGFeacJL1mueFLI3JJS9IaUiBDM4SQhVOFc-QzpXJGU2n4GbMbV3zs9M-iKrZuW1fKRJEaEpRhtKeikdKucZ7p41onf2WrhMYiWE7MWwnKBPjdr3hdjTYpv1PrCrZDhB7wwdQtKU5Ah9J_gM6G332</recordid><startdate>20170601</startdate><enddate>20170601</enddate><creator>Takeuchi, Kazuma</creator><creator>Ezoe, Yuichiro</creator><creator>Ishikawa, Kumi</creator><creator>Nakamura, Kasumi</creator><creator>Numazawa, Masaki</creator><creator>Terada, Masaru</creator><creator>Fujitani, Maiko</creator><creator>Ishi, Daiki</creator><creator>Noda, Yusuke</creator><creator>Ohashi, Takaya</creator><creator>Morishita, Kohei</creator><creator>Nakajima, Kazuo</creator><creator>Mitsuda, Kazuhisa</creator><general>The Japan Society of Applied Physics</general><general>Japanese Journal of Applied Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20170601</creationdate><title>X-ray evaluation of high-verticality sidewalls fabricated by deep reactive ion etching</title><author>Takeuchi, Kazuma ; Ezoe, Yuichiro ; Ishikawa, Kumi ; Nakamura, Kasumi ; Numazawa, Masaki ; Terada, Masaru ; Fujitani, Maiko ; Ishi, Daiki ; Noda, Yusuke ; Ohashi, Takaya ; Morishita, Kohei ; Nakajima, Kazuo ; Mitsuda, Kazuhisa</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c447t-82dd806a136acc6f67ce474813679badff9a7b4df4b0f18245c13c780e9cf9653</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>Ion etching</topic><topic>Reactive ion etching</topic><topic>Smoothness</topic><topic>Verticality</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Takeuchi, Kazuma</creatorcontrib><creatorcontrib>Ezoe, Yuichiro</creatorcontrib><creatorcontrib>Ishikawa, Kumi</creatorcontrib><creatorcontrib>Nakamura, Kasumi</creatorcontrib><creatorcontrib>Numazawa, Masaki</creatorcontrib><creatorcontrib>Terada, Masaru</creatorcontrib><creatorcontrib>Fujitani, Maiko</creatorcontrib><creatorcontrib>Ishi, Daiki</creatorcontrib><creatorcontrib>Noda, Yusuke</creatorcontrib><creatorcontrib>Ohashi, Takaya</creatorcontrib><creatorcontrib>Morishita, Kohei</creatorcontrib><creatorcontrib>Nakajima, Kazuo</creatorcontrib><creatorcontrib>Mitsuda, Kazuhisa</creatorcontrib><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Takeuchi, Kazuma</au><au>Ezoe, Yuichiro</au><au>Ishikawa, Kumi</au><au>Nakamura, Kasumi</au><au>Numazawa, Masaki</au><au>Terada, Masaru</au><au>Fujitani, Maiko</au><au>Ishi, Daiki</au><au>Noda, Yusuke</au><au>Ohashi, Takaya</au><au>Morishita, Kohei</au><au>Nakajima, Kazuo</au><au>Mitsuda, Kazuhisa</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>X-ray evaluation of high-verticality sidewalls fabricated by deep reactive ion etching</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><addtitle>Jpn. J. Appl. Phys</addtitle><date>2017-06-01</date><risdate>2017</risdate><volume>56</volume><issue>6S1</issue><spage>6</spage><pages>6-</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><coden>JJAPB6</coden><abstract>We report the fabrication and characterization of high-verticality sidewalls by deep reactive ion etching (DRIE). We quantitatively evaluated the verticality of the sidewalls with a width of 20 µm and a depth of 300 µm by using an X-ray beam (1.49 keV). To the best of our knowledge, we succeeded in constraining the verticality and smoothness of the DRIE-fabricated sidewalls with the highest accuracy. The verticality of the sidewalls against the wafer surface was estimated from the shifts of the X-ray focus to be 8.7 ± 3.2 arcmin on average within the wafer, while the resolution of the X-ray focus was 21.1 ± 2.7 arcmin in half-power diameter. Although the verticality and resolution require further improvements, we verified that the X-ray imaging technique is valid for quantifying the sidewall properties.</abstract><cop>Tokyo</cop><pub>The Japan Society of Applied Physics</pub><doi>10.7567/JJAP.56.06GN04</doi><tpages>4</tpages></addata></record> |
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| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| subjects | Ion etching Reactive ion etching Smoothness Verticality |
| title | X-ray evaluation of high-verticality sidewalls fabricated by deep reactive ion etching |
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